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Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Pevo (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
2,366 edits
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*Al<sub>2</sub>O<sub>3</sub>
*Al<sub>2</sub>O<sub>3</sub>
*TiO<sub>2</sub> (amorphous or anatase)
*TiO<sub>2</sub> (amorphous or anatase)
*HfO<sub>2</sub>
*ZnO
*ZnO
*HfO<sub>2</sub>
*AZO (Al-doped ZnO)
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
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|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 150 - 300 <sup>o</sup>C
*Al<sub>2</sub>O<sub>3</sub>: 150 - 300 <sup>o</sup>C
*amorphous TiO<sub>2</sub>: 100-150 <sup>o</sup>C
*Amorphous TiO<sub>2</sub>: 100-150 <sup>o</sup>C
*anatase TiO<sub>2</sub>: 300-350 <sup>o</sup>C
*Anatase TiO<sub>2</sub>: 300-350 <sup>o</sup>C
*ZnO: 100 - 250 <sup>o</sup>C
*ZnO: 100 - 250 <sup>o</sup>C
*HfO<sub>2</sub>: 150-300 <sup>o</sup>C
*HfO<sub>2</sub>: 150-300 <sup>o</sup>C
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