Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

@@ Line 53: / Line 53: @@
 *Al<sub>2</sub>O<sub>3</sub>
 *TiO<sub>2</sub> (amorphous or anatase)
+*ZnO
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
@@ Line 59: / Line 60: @@
 *Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on the temperature)
 *TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on the temperature)
+*ZnO: 0.11-0.18 nm/cycle (Using ZnOT recipe, depending on temperature)
 |-
 |style="background:LightGrey; color:black"|Thickness
 |style="background:WhiteSmoke; color:black"|
 *Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
+*TiO<sub>2</sub>: 0 - 100 nm
+*ZnO: 0 - 100 nm
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
 |style="background:LightGrey; color:black"|Temperature
 |style="background:WhiteSmoke; color:black"|
-*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
+*Al<sub>2</sub>O<sub>3</sub>: 150 - 300 <sup>o</sup>C
+*amorphous TiO<sub>2</sub>: 100-150 <sup>o</sup>C
+*anatase  TiO<sub>2</sub>: 300-350 <sup>o</sup>C
+*ZnO: 100 - 250 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Precursors
 |style="background:WhiteSmoke; color:black"|
 *TMA
+*DEZ
 *TiCl<sub>4</sub>
 *H<sub>2</sub>O