Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
| Line 42: | Line 42: | ||
*Silicon nitride | *Silicon nitride | ||
*Silicon oxynitride | *Silicon oxynitride | ||
*BPSG (Phosphorous | *BPSG (Boron Phosphorous doped Silica Glass) | ||
*Silicon oxide doped with Germanium | *Silicon oxide doped with Germanium | ||
| | | | ||
| Line 48: | Line 48: | ||
*Silicon nitride | *Silicon nitride | ||
*Silicon oxynitride | *Silicon oxynitride | ||
*BPSG (Phosphorous | *BPSG (Boron Phosphorous doped Silica Glass) | ||
*Silicon oxide doped with Germanium | *Silicon oxide doped with Germanium | ||
| | | | ||
| Line 54: | Line 54: | ||
*Silicon nitride | *Silicon nitride | ||
*Silicon oxynitride | *Silicon oxynitride | ||
*BPSG (Phosphorous | *BPSG (Boron Phosphorous doped Silica Glass) | ||
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!style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance | !style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance | ||