Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time. | Danchip has one LPCVD TEOS furnace (installed in 1995). The furnace is a Tempress horizontal furnace. The process is a batch process, where TEOS can be deposited on up to 15 wafer at a time. | ||
TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of | TEOS is a silicon dioxide based on tetraethoxysilane. The reactive gas is TEOS, and the deposition takes place at a temperature of 712-720 <sup>o</sup>C (temperature variation over the furnace tube). It is possible to anneal the TEOS layer to improve the electrical properties as well as chemical resistance. | ||
The LPCVD TEOS has an excellent step coverage and is very good for trench filling. The film thickness is very uniform over each wafer. | |||
'''The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:''' | '''The user manual(s), quality control procedure(s) and results, technical information and contact information can be found in LabManager:''' | ||