Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
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|style="background:LightGrey; color:black"|Gas flows | |style="background:LightGrey; color:black"|Gas flows | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*SiH<sub> | *SiH<sub>4</sub>:0-50 sccm | ||
*N<sub> | *N<sub>2</sub>O:0-4260 sccm | ||
*NH<sub> | *NH<sub>3</sub>:0-740 sccm | ||
*N<sub> | *N<sub>2</sub>:0-3000 sccm | ||
*GeH<sub> | *GeH<sub>4</sub>:0-6.00 sccm | ||
*5%PH<sub> | *5%PH<sub>3</sub>:0-100 sccm | ||
*3%B<sub> | *3%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm | ||
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*SiH<sub> | *SiH<sub>4</sub>:0-60 sccm | ||
*N<sub> | *N<sub>2</sub>O:0-3000 sccm | ||
*NH<sub> | *NH<sub>3</sub>:0-1000 sccm | ||
*N<sub> | *N<sub>2</sub>:0-3000 sccm | ||
*GeH<sub> | *GeH<sub>4</sub>:0-6.00 sccm | ||
*5%PH<sub> | *5%PH<sub>3</sub>:0-99 sccm | ||
*5%B<sub> | *5%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm | ||
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!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates | !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates | ||