Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS|LPCVD(TEOS)]] | ![[Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS|LPCVD(TEOS)]] | ||
![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] | ![[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]] | ||
![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ![[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab300]] | ||
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
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|Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process. | |Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process. | ||
|Plasma Enhanced Chemical Vapor Deposition has the advantach that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature. | |Plasma Enhanced Chemical Vapor Deposition has the advantach that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature. | ||
|Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods. | |Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods. | ||
|Sputter deposition: can be done ontop of a large range of materials | |Sputter deposition: can be done ontop of a large range of materials | ||
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*Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | *Si<sub>x</sub>O<sub>y</sub>H<sub>z</sub> | ||
Can be doped with boron, phosphorus or germanium | Can be doped with boron, phosphorus or germanium | ||
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*Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used | *Not measured (a sputter target with stoichiometry SiO<sub>2</sub> is used | ||
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*~40nm - 30µm | *~40nm - 30µm | ||
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*~10nm - ~1µm(>2h) | *~10nm - ~1µm(>2h) | ||
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*300 <sup>o</sup>C | *300 <sup>o</sup>C | ||
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*Expected to be below 100<sup>o</sup>C | *Expected to be below 100<sup>o</sup>C | ||
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*Less good | *Less good | ||
*When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation. | *When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation. | ||
*Deposition on one side of the substrate | *Deposition on one side of the substrate | ||
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*Less dense film | *Less dense film | ||
*Incorporation of hydrogen in the film | *Incorporation of hydrogen in the film | ||
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* | * | ||
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*1-3 100 mm wafers | *1-3 100 mm wafers | ||
*1 150 mm wafer | *1 150 mm wafer | ||
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*Several small samples mounted with capton tape | *Several small samples mounted with capton tape | ||
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*IIIV materials (in PECVD2) | *IIIV materials (in PECVD2) | ||
*Small amount of metal (in PECVD3) | *Small amount of metal (in PECVD3) | ||
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*Almost any material | *Almost any material | ||