Specific Process Knowledge/Lithography/Strip: Difference between revisions

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-A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
+A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210 ml O<math>_2</math>/min or mixture of 210 ml O<math>_2</math>/min and 70 ml N<math>_2</math>/min, power 1000 W.
-A Descum process in manuel mode: O2: 70sccm, N2: 70sccm, power: 150W, time: 10min. Be sure to wait for cooling if the machine has been used at 1000W right before.
+A Descum process in manuel mode: O2: 70 sccm, N2: 70 sccm, power: 150 W, time: 10 min. Be sure to wait for cooling if the machine has been used at 100 0W right before.
-At a load at 2 Fused silica wafers resist removed 0.01-01,5um
+At a load at 2 Fused silica wafers resist removed 0.01-01,5 um
 ==Plasma asher==