Specific Process Knowledge/Lithography/Strip: Difference between revisions
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=Plasma | = Plasma ashing = | ||
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A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W. | A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W. | ||
=Plasma Asher 2 = | ==Plasma Asher 1== | ||
[[Image:plasmaasher2.JPG|300x300px|thumb|The PlasmaAsher1 is placed in C-1]] | |||
The Plasma Asher1( 300 auto load model) can be used for the following process: | |||
*Photoresist stripping | |||
*Surface cleaning after storage | |||
*Surface cleaning after processes using oil pump or diffusion pump vacuum | |||
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching | |||
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE | |||
*Removal of organic passivating layers and masks | |||
*Etching of glass and ceramic | |||
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si | |||
*Removal of polyimide layers | |||
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip. | |||
===Process Information=== | |||
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]] | |||
==Plasma Asher 2== | |||
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]] | [[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]] | ||
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=III-V Plasma Asher = | ==III-V Plasma Asher== | ||
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]] | [[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]] | ||