Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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!Substrate size | !Substrate size / Batch size | ||
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*1-13 100 mm wafers | *1-13 100 mm wafers | ||
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!'''Allowed materials''' | !'''Allowed materials''' | ||
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* | *Silicon wafers | ||
* | **with layers of silicon oxide or silicon (oxy)nitride | ||
*Quartz wafers | |||
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* | *Silicon | ||
* | **with layers of silicon oxide or silicon (oxy)nitride | ||
* | *Quartz | ||
*IIIV materials (in PECVD2) | |||
*Small amount of metal (in PECVD3) | |||
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*Silicon | |||
**with layers of silicon oxide or silicon (oxy)nitride | |||
*Quartz | |||
*Metals | |||
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*Almost any material | |||
*not Pb and very poisonous materials | |||
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