Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

@@ Line 185: / Line 185: @@
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 *Excelent. Very high surface mobility.
+*Deposition on both sides of the substrate.
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 *Less good
 *When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation.
+*Deposition on one side of the substrate
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-*
+*Not known
-|Not Known
+*Deposition on one side of the substrate
+|
+*Not Known
+*Deposition on one side of the substrate
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 !Substrate size
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-*<nowiki>#</nowiki> small samples
+*1-13 100 mm wafers
-*<nowiki>#</nowiki> 50 mm wafers
-*<nowiki>#</nowiki> 100 mm wafers
-*<nowiki>#</nowiki> 150 mm wafers
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-*<nowiki>#</nowiki> small samples
+*Several small samples
-*<nowiki>#</nowiki> 50 mm wafers
+*1-7 50 mm wafers
-*<nowiki>#</nowiki> 100 mm wafers
+*1-3 100 mm wafers
-*<nowiki>#</nowiki> 150 mm wafers
+*1 150 mm wafer
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+*Several small samples
+*1-12 100 mm wafers
+*1-4 150 mm wafers
+*Process time for 3 wafers is the same as for 1 wafer
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+*Several small samples mounted with capton tape
+*1 50 mm wafer
+*1 100 mm wafer
+*1 150 mm wafer
+*1 200 mm wafer
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