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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,324 edits
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!2
!Step Coverage
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*~300nm - 4µm
*Excelent. Very high surface mobility.
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*~40nm - 30µm
*Less good
*When doped with phosphorus and/or Boron the oxide can float at about 1000 <sup>o</sup>C in a wet oxidation.
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*Thin layers (up to 300-400 nm)
*
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|Not Known
*~10nm - ~1µm(>2h)
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