Specific Process Knowledge/Back-end processing/Laser Micromachining Tool: Difference between revisions
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| [[silicon cutting.par]] | | [[silicon cutting.par]] | ||
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| Silicon with SiliconNitride | | Silicon with SiliconNitride | ||
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| [[silicon-SiN cutting.par]] | | [[silicon-SiN cutting.par]] | ||
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| Borofloat glass | | Borofloat glass | ||
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| [[borofloat cutting.par]] | | [[borofloat cutting.par]] | ||
|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Nickel | | Nickel | ||
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| [[nickel cutting red.par]] | | [[nickel cutting red.par]] | ||
|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Nickel | | Nickel | ||
| "wafer" 85mm diameter | | "wafer" 85mm diameter | ||
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| Fixed Burst mode, 3 pulses. Sky writing mode 3. | | Fixed Burst mode, 3 pulses. Sky writing mode 3. | ||
| [[media:Nickel_shim_3_bursts_532nm%2C_F_255mm.doc|nickel cutting green parameters]] | | [[media:Nickel_shim_3_bursts_532nm%2C_F_255mm.doc|nickel cutting green parameters]] | ||
|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Mask making | | Mask making | ||
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| align="center" valign="top" style="background:LightGray"|''' Parameter file''' | | align="center" valign="top" style="background:LightGray"|''' Parameter file''' | ||
| align="center" valign="top" style="background:LightGray"|''' Comments''' | | align="center" valign="top" style="background:LightGray"|''' Comments''' | ||
|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Silicon 525µm | | Silicon 525µm | ||
| Green(532nm/255mm) | | Green(532nm/255mm) | ||
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| [[media:Dicing_Si_532nm_f255mm.xls|Silicon dicing green parameters]] | | [[media:Dicing_Si_532nm_f255mm.xls|Silicon dicing green parameters]] | ||
| Easily break silicon in cristal plan. Depth of the groove : 25µm | | Easily break silicon in cristal plan. Depth of the groove : 25µm | ||
|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Silicon (525µm) + Si3N4 (150nm to 1,2µm) OR SiO2 (150nm to 320nm) | | Silicon (525µm) + Si3N4 (150nm to 1,2µm) OR SiO2 (150nm to 320nm) | ||
| Red (1064nm/255mm) | | Red (1064nm/255mm) | ||
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| Samples can easily be removed with a soft mecanical pressure. A layer of resist (AZMIR701) can be deposited on the top without influence the dicing. However, the burnt resist may induce cracks that can propagate, under the influence of the number of iteration. The blue tape may sticks to the wafer a the end of the process. | | Samples can easily be removed with a soft mecanical pressure. A layer of resist (AZMIR701) can be deposited on the top without influence the dicing. However, the burnt resist may induce cracks that can propagate, under the influence of the number of iteration. The blue tape may sticks to the wafer a the end of the process. | ||
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|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Nickel (320µm) | | Nickel (320µm) | ||
| Green(532nm/255mm) | | Green(532nm/255mm) | ||
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| Cutting through only blue tape left | | Cutting through only blue tape left | ||
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|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Pyrex 1000µm | | Pyrex 1000µm | ||
| Red(1064nm/255mm) | | Red(1064nm/255mm) | ||
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| Increase/decrease the number of iteration to increase/decrease the width of the hole. [[file:pyrex_10um_hole_chanel.jpg|Microscope view of the chanel ]] | | Increase/decrease the number of iteration to increase/decrease the width of the hole. [[file:pyrex_10um_hole_chanel.jpg|Microscope view of the chanel ]] | ||
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|- style="background:LightGray" valign="top" | |- style="background:LightGray;text-align:center" valign="top" | ||
| Pyrex/Borosilicate glass (525µm) | | Pyrex/Borosilicate glass (525µm) | ||
| Red(1064nm/255mm) | | Red(1064nm/255mm) | ||