Specific Process Knowledge/Back-end processing/Laser Micromachining Tool/Silicon cutting and milling
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Surface morphology after milling
This test was performed on a Si wafer n-type single polish and the milling has been done by the laser Time-Bandwidth with a normal incident at the wavelength of 532nm and a focal distance of 255mm. The frequency of 200 kHz has been used and no adjustement of the focus has been made during the milling. The patern engraved was a serial of single lines separated from each other by 50µm (no influence between each line), and were milled at different speeds and at different number of iteration (irradiations). The wafer got a ultrasonic cleaning and a isopropanol cleaning before enter into the SEM.
The morphology from the laser mark is closely linked to the number of irradiations the substrate got. As the laser heats the substrat, spikes are forming as show in the figure (a) beside. The microstrucutre evolves with the number of iteration like the depth
Generated dirt after cutting
The among of dirt generated after a laser cut on Si is significant. An ultrasonic bath may reduce much particles produced.
Redeposition of material
When machining silicon, a redeposition of material (mainly SiO2 according to the XPS survey - see table below) can be observed on both edges of the groove. However, a larger amount is redeposited on the groove's edge locates on the opposite side of the laser's exhaust stream air. The redeposite material has a significant influence on the width of the groove.
Elemental analysis of Silicon after machining using X-ray photoelectron spectroscopy
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