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Specific Process Knowledge/Lithography/Strip: Difference between revisions

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*Resist stripping
*Resist stripping
*Resist descum
*Resist descum
*Surface treatment
*Other ashing of organic material
|
|
*Resist stripping
*Resist stripping
*Resist descum
*Resist descum
*Surface treatment
*Other ashing of organic material
| Resist stripping
| Resist stripping
| Metal lift-off
| Metal lift-off
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| 150-1000 W
| 150-1000 W
| 150-1000 W
| 150-1000 W
| NA
| NA
|-
! scope=row style="text-align: left;" | Process pressure
| 0.8 mbar
| 0.5-1.5 mbar
| 0.5-1.5 mbar
| NA
| NA
| NA
| NA
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| NA
| NA
| NA
| NA
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
! scope=row style="text-align: left;" | Process time
| 1-10 minutes
|
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|
|
*NMP (Remover 1165)
*NMP (Remover 1165)
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<br clear="all" />


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= Plasma Ashing process parameters=
= Plasma Ashing process parameters=


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{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}