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Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
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Taran (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891
3,527 edits
Line 471: Line 471:
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA), ±2µm (±1µm has been demonstrated)
*Top side (TSA), ±1µm (machine spec: ±2µm)
*Backside (BSA), ±5µm (±2µm has been demonstrated)
*Backside (BSA), ±2µm (machine spec: ±5µm)
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|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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