Specific Process Knowledge/Lithography/EBeamLithography/EBLsubstratePrep: Difference between revisions
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For samples with 2D materials such as graphene, HBN, etc., it is '''mandatory''' to apply a 20 nm Al layer on top of the resist in order to expose the substrate in the JEOL 9500 system. The Raith eLine system does not have this requirement. | For samples with 2D materials such as graphene, HBN, etc., it is '''mandatory''' to apply a 20 nm Al layer on top of the resist in order to expose the substrate in the JEOL 9500 system. The Raith eLine system does not have this requirement. | ||
== Inspection == | |||
Post exposure pattern dimensions are dependent on resist thickness. Thus, it is advisable to verify resist thickness after spin coating. This can be done by ellipsometry in the [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|VASE Ellipsometer]]. | Post exposure pattern dimensions are dependent on resist thickness. Thus, it is advisable to verify resist thickness after spin coating. This can be done by ellipsometry in the [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer|VASE Ellipsometer]]. | ||