Specific Process Knowledge/Thin film deposition/Furnace LPCVD TEOS: Difference between revisions
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[[Category: Furnaces|LPCVD TEOS]] | [[Category: Furnaces|LPCVD TEOS]] | ||
==LPCVD | ==LPCVD TEOS oxide== | ||
[[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]] | [[Image:160904_danchip_4538.jpg|300x300px|thumb|B3 Furnace LPCVD TEOS. Positioned in cleanroom B-1]] | ||
DTU Nanolab has one LPCVD TEOS furnace | DTU Nanolab has one LPCVD (Low Pressure Chemical Vapor Deposition) TEOS furnace. The furnace is a Tempress horizontal furnace (installed in 1995). The process is a batch process, where TEOS oxide can be deposited on up to 15 4 inch wafers at a time. | ||
TEOS is a silicon dioxide based on | TEOS is tetraethoxysilane, and TEOS oxide is a silicon dioxide based on this reactive chemical that during deposition condenses on the sample surface. The deposition takes place at a temperature of 712-720 <sup>o</sup>C (there is a small temperature gradient over the furnace tube). | ||
It is possible to anneal the TEOS oxide layer to increase the density and thus improve the electrical properties as well as the chemical resistance. The electrical characteristics may also be improved by the addition of O<sub>2</sub> during the deposition process. | |||
The LPCVD TEOS oxide has an excellent step coverage and is very good for trench filling, however very small and deep trenches will be challenging. The film thickness is very uniform over each wafer. | |||
More information about the TEOS oxide deposition process can be found here: | |||
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'''[https://labmanager.dtu.dk/d4Show.php?id=1926 Furnace computer manual]''' | '''[https://labmanager.dtu.dk/d4Show.php?id=1926 Furnace computer manual]''' | ||
== Manual for the furnace computer to the A, B, C and E stack furnaces == | == Manual for the furnace computer to the A, B, C and E stack furnaces == | ||