Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

From LabAdviser
← Older editNewer edit →
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,298 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,298 edits
Line 730: Line 730:
<br clear="all" />
<br clear="all" />


<!--
==Inclined UV Lamp==
==Inclined UV Lamp==
[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in CX-1]]
[[Image:Inclined UV lamp_1.jpg|300x300px|right|thumb|Inclined UV lamp is placed in CX-1]]
Line 799: Line 800:


<br clear="all" />
<br clear="all" />
-->

Revision as of 13:41, 10 May 2023

The contents on this page, including all images and pictures, was created by DTU Nanolab staff unless otherwise stated.

Feedback to this page: click here

UV Exposure Comparison Table

Equipment KS Aligner Aligner: MA6 - 2 Aligner: Maskless 01 Aligner: Maskless 02 Aligner: Maskless 03
Purpose
  • Top Side Alignment
  • Back Side Alignment
  • UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • UV exposure
  • (DUV exposure)
  • Bond alignment
  • Top Side Alignment
  • Maskless UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • Maskless UV exposure
  • Top Side Alignment
  • Back Side Alignment
  • Maskless UV exposure
Performance Minimum feature size

~1 µm

~1 µm

~1 µm

~1 µm

~1 µm

Exposure light/filters/spectrum
  • 350W Hg lamp
  • i-line filter (365nm notch filter)
    Intensity in Constant Intensity mode:
    8mW/cm2 @ 365nm
  • 303nm filter optional
  • 500W Hg-Xe lamp
  • i-line filter (365nm notch filter)
    Intensity in Constant Intensity mode:
    11mW/cm2 @ 365nm
  • UV350 optics optional
  • UV250 optics optional

365nm LED

375nm laserdiodes

405nm laserdiodes

Exposure mode
  • Flood exposure
  • Proximity
  • Contact:
    • Soft contact
    • Hard contact
    • Vacuum contact
  • Flood exposure
  • Proximity
  • Contact:
    • Soft contact
    • Hard contact
    • Vacuum contact
  • Projection:
    • Pneumatic auto-focus
  • Projection:
    • Optical auto-focus
    • Pneumatic auto-focus
  • Projection:
    • Pneumatic auto-focus
Substrates Batch size
  • 1 small sample, down to 10x10 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 10x10 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 5x5 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 small sample, down to 3x3 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
  • 1 200 mm wafer
  • 1 small sample, down to 5x5 mm2
  • 1 50 mm wafer
  • 1 100 mm wafer
  • 1 150 mm wafer
Allowed materials
  • All cleanroom materials except copper and steel
  • Dedicated 2inch chuck for III-V materials
  • All cleanroom materials except copper and steel
  • Dedicated chuck for III-V materials
  • All cleanroom materials
  • All cleanroom materials
  • All cleanroom materials

KS Aligner

The KS Aligner is placed in E-4

SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.


Training videos:

Operation

Alignment


The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager - requires login

Exposure dose

Information on UV exposure dose

Process information

The KS Aligner has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.

Quality Control (QC)

Quality Control (QC) for KS Aligner
QC Recipe: Manual intensity measurement
Measurement area 4"
Number of measurements 5
QC limits KS Aligner
Nominal intensity 8 mW/cm2 @ 365 nm
Intensity deviation from nominal ≤5%
Intensity non-uniformity ≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

vacuum contact, hard contact, soft contact, proximity, flood exposure

Exposure light/filters
  • broadband (i-, g-, h-line)
  • 365 nm (i-line)
  • 303 nm
Minimum structure size

down to 1.25µm

Mask size
  • 5x5 inch
  • 7x7 inch
  • special holder for 4 x 2" designs on 5x5 inch
Alignment modes
  • Top side (TSA)
  • Backside (BSA)
Substrates Substrate size
  • small pieces 1x1cm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials

Dedicated chuck for III-V materials

Batch

1


Aligner: MA6 - 2

The Aligner: MA6 - 2 is placed in E-4

The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.


Training videos:

Operation

Alignment


The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager - requires login

Exposure dose

Information on UV exposure dose

Process information

The Aligner: MA6 - 2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.

Quality Control (QC)

Quality Control (QC) for Aligner: MA6-2
QC Recipe: Manual intensity measurement
Measurement area 4"
Number of measurements 5
QC limits Aligner: MA6-2
Nominal intensity 11 mW/cm2 @ 365 nm
Intensity deviation from nominal ≤5%
Intensity non-uniformity ≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.

Alignment

Top Side Alignment:

  • TSA microscope standard objectives: 5X, and 10X (20X available)
  • TSA microscope special objectives: 11.25X offset (for smaller separation)
  • Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
  • Maximum distance between TSA microscope objectives: 160 mm
  • TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

BackSide Alignment:

  • Minimum distance between BSA microscope objectives: 15 mm
  • Maximum distance between BSA microscope objectives: 100 mm
  • BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
  • BSA chuck view ranges:
    • 2": X +/- 8-22mm; Y +/- 0-6mm
    • 4": X +/- 14-46mm; Y +/- 0-10mm
    • 6": X +/- 14-69mm; Y +/- 0-10mm


Microscope field of view (W x H, splitfield):

  • TSA 5X
    • Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
    • Camera: 350µm x 500µm (700µm x 500µm full field)
  • TSA 10X
    • Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
    • Camera: 150µm x 250µm (350µm x 250µm full field)
  • TSA special
    • Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
    • Camera: 150µm x 200µm (300µm x 200µm full field)
  • BSA camera
    • Low: 1.5mm x 2mm (3mm x 2mm full field)
    • High: 450µm x 650µm (950µm x 650µm full field)

Equipment performance and process related parameters

Purpose

Mask alignment and UV exposure, potentially DUV exposure 1)

Bond alignment

Performance Exposure mode

vacuum contact, hard contact, soft contact, proximity, flood exposure

Exposure light/filters
  • broadband (i-, g-, h-line)
  • 365 nm (i-line)
  • "UV300" (280-350 nm)
  • DUV (240 nm) 1)
Minimum structure size

Typically 1.25 µm, possibly down to 0.8 µm 1)

Mask size
  • 5x5 inch
  • 7x7 inch
  • special holder for 4 x 2" designs on 5x5 inch
Alignment modes
  • Top side (TSA)
  • Backside (BSA)
Substrates Substrate size
  • small pieces 1x1cm
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

All cleanroom materials except copper and steel

Dedicated chuck for III-V materials

Batch

1

1) Not available yet. Requires tool change. Would require safety investigation (and a dedicated project) to become available.


Aligner: Maskless 01

Aligner: Maskless 01 positioned in E-5 (2017)

The logon password for the PC is "mla" (without quotation marks).

The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The system offers top side alignment with high accuracy.


The user manual and contact information can be found in LabManager:

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light

365nm (LED), FWHM=8nm

Focusing method

Pneumatic

Minimum structure size

down to 1µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes

Top side only

Substrates Substrate size
  • maximum writing area: 125x125 mm2
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 5x5 mm2
Allowed materials

All cleanroom materials

Batch

1


Aligner: Maskless 02

MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).


Special features

  • Optical Autofocus
  • Backside Alignment
  • Basic Gray Scale Exposure
  • Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
  • High Aspect Ratio Mode for exposure of thick resists
  • 200 x 200 mm exposure field
  • Separate conversion PC


Training videos

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light
  • 375 nm

(laser diode arrays)

Focusing method
  • Optical
  • Pneumatic
Minimum structure size

down to 1 µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes
  • Top side alignment
  • Backside alignment
  • Field alignment (chip-by-chip TSA)
Substrates Substrate size
  • maximum writing area: 200x200 mm2
  • 200 mm wafer
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 3x3 mm2 1)
Allowed materials

All cleanroom materials

Batch

1

1) with optical autofocus


Aligner: Maskless 03

MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.


Special features:

  • Backside Alignment
  • Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
  • Separate conversion PC (Power PC)


Training videos

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

Equipment performance and process related parameters

Purpose

Alignment and UV exposure

Performance Exposure mode

Projection

Exposure light

405nm
(laser diode array)

Focusing method

Pneumatic

Minimum structure size

down to 1 µm

Design formats
  • GDS-II
  • CIF
  • DXF
  • Gerber
  • HIMT format
Alignment modes
  • Top side alignment
  • Backside alignment
  • Field alignment (chip-by-chip TSA)
Substrates Substrate size
  • maximum writing area: 150x150 mm2
  • 150 mm wafer
  • 100 mm wafer
  • 50 mm wafer
  • pieces down to 5x5 mm2
Allowed materials

All cleanroom materials

Batch

1



Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/UVExposure&oldid=46176"