Specific Process Knowledge/Lithography/Descum: Difference between revisions

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 Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
-Recipe setting was the same as in previous test in September 2019: 70ml/min O2, 70 ml/min N2, power 150W, different ashing time 1, 2, 3, 5 and 7 min run. Plasma Asher was cold before use, we observed minor temperature rise during processing, but not more than 5 degrees. Starting chambers pressure was around 0, 5 mbar.
+'''Recipe settings:'''<br>
+Note: plasma Asher was cold before use.
+*O2 flow: 70 ml/min
+*N2 flow: 70 ml/min
+Power: 150 W
+Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.
 '''1,5 um AZ5214E resist'''