Specific Process Knowledge/Characterization/XPS/NexsaOverview: Difference between revisions

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| [[media:Shin_et_al-2012-Surface_and_Interface_Analysis.pdf |  Reflection electron energy loss spectroscopy for ultrathin gate oxide materials]]||Publication||H C Shin||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000304348200002]||X||||||X||||Valence band||HfZrO4,||<span title="The band alignment of HfZrO4 gate oxide thin films on Si (100) deposited by the atomic layer deposition method has been investigated using reflection electron energy loss spectroscopy and XPS. The band gap of HfZrO4 gate oxide thin film is 5.40 +/-0.05 eV. The valence band offset (ΔEv) and the conduction band offset (ΔEc) are 2.50+/-0.05 eV and 1.78+/-0.05 eV, respectively. These values satisfy the minimum requirement for the hole and electron barrier heights of larger than 1 eV for device applications. We have demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO4 thin films provides us a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials."> Abstract</span>
| [[media:Shin_et_al-2012-Surface_and_Interface_Analysis.pdf |  Reflection electron energy loss spectroscopy for ultrathin gate oxide materials]]||Publication||H C Shin||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000304348200002]||X||||||X||||Valence band||HfZrO4,||<span title="The band alignment of HfZrO4 gate oxide thin films on Si (100) deposited by the atomic layer deposition method has been investigated using reflection electron energy loss spectroscopy and XPS. The band gap of HfZrO4 gate oxide thin film is 5.40 +/-0.05 eV. The valence band offset (ΔEv) and the conduction band offset (ΔEc) are 2.50+/-0.05 eV and 1.78+/-0.05 eV, respectively. These values satisfy the minimum requirement for the hole and electron barrier heights of larger than 1 eV for device applications. We have demonstrated that the quantitative analysis of reflection electron energy loss spectroscopy spectra obtained from HfZrO4 thin films provides us a straightforward way to determine the optical properties and the inelastic mean free path of ultrathin gate oxide materials."> Abstract</span>
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| [[media:Steinberger-2017-Oxygen-accumulation-on-metal-surfac.pdf | Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions]]||Publication||R Steinberger||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000401391900023 link]||X||||X||||||AES, ARXPS, sputter profiles||<span title="Oxygen on metal surfaces||Depth profiling using surface sensitive analysis methods in combination with sputter ion etching is a common procedure for thorough material investigations, where clean surfaces free of any contaminationare essential. Hence, surface analytic studies are mostly performed under ultra-high vacuum (UHV) conditions, but the cleanness of such UHV environments is usually overrated. Consequently, the current study highlights the in principle known impact of the residual gas on metal surfaces (Fe, Mg, Al, Cr and Zn) for various surface analytics methods, like X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and low-energy ion scattering (LEIS). The investigations with modern, stateof-the-art equipment showed different behaviors for the metal surfaces in UHV during acquisition: (i) no impact for Zn, even after long time, (ii) solely adsorption of oxygen for Fe, slight and slow changes for Cr and (iii) adsorption accompanied by oxide formation for Al and Mg. The efficiency of different counter measures was tested and the acquired knowledge was finally used for ZnMgAl coated steel to obtain accurate depth profiles, which exhibited before serious artifacts when data acquisition was performed in an inconsiderate way."> Abstract</span>
| [[media:Steinberger-2017-Oxygen-accumulation-on-metal-surfac.pdf | Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions]]||Publication||R Steinberger||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/CitedFullRecord.do?product=WOS&colName=WOS&SID=F6P8vdNQigRKywglhCq&search_mode=CitedFullRecord&isickref=WOS:000401391900023 link]||X||||X||||||AES, ARXPS, sputter profiles||Oxygen on metal surfaces||<span title="Depth profiling using surface sensitive analysis methods in combination with sputter ion etching is a common procedure for thorough material investigations, where clean surfaces free of any contaminationare essential. Hence, surface analytic studies are mostly performed under ultra-high vacuum (UHV) conditions, but the cleanness of such UHV environments is usually overrated. Consequently, the current study highlights the in principle known impact of the residual gas on metal surfaces (Fe, Mg, Al, Cr and Zn) for various surface analytics methods, like X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and low-energy ion scattering (LEIS). The investigations with modern, stateof-the-art equipment showed different behaviors for the metal surfaces in UHV during acquisition: (i) no impact for Zn, even after long time, (ii) solely adsorption of oxygen for Fe, slight and slow changes for Cr and (iii) adsorption accompanied by oxide formation for Al and Mg. The efficiency of different counter measures was tested and the acquired knowledge was finally used for ZnMgAl coated steel to obtain accurate depth profiles, which exhibited before serious artifacts when data acquisition was performed in an inconsiderate way."> Abstract</span>
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| [[media:Symianakis-2015-Electrochemical-characterization-an.pdf | Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO3 Powders]]||Publication||E Symianakis||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/full_record.do?product=WOS&search_mode=CitingArticles&qid=283&SID=F6P8vdNQigRKywglhCq&page=1&doc=3 link]||X||||X||||||XRD||Catalysts, LaMnO3||<span title="LaMnO3 powder synthesized by glycine combustion synthesis with the rhombohedral and orthorhombic structures has been characterized by the combination of low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS), while the electrocatalytic activity for the oxygen reduction reaction is measured with the rotating disk electrode (RDE) method. Quantification of the surface terminations obtained by LEIS suggests that the orthorhombic LaMnO3 crystallites are near thermodynamic equilibrium as surface atomic ratios compare well with those of equilibrium morphologies computed by a Wulff construction based on computed surface energies. Both rhombohedral and orthorhombic structures present the same La/Mn atomic ratio on the surface. Electrochemical activity of the two structures is found to be the same within the error bar of our measurements. This result is in disagreement with results previously reported on the activity of the two structures obtained by the coprecipitation method [Suntivich et al. Nat. Chem. 2011, 3 (7), 546], and it indicates that the preparation method and the resulting surface termination might play a crucial role for the activity of perovskite catalysts."> Abstract</span>
| [[media:Symianakis-2015-Electrochemical-characterization-an.pdf | Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO3 Powders]]||Publication||E Symianakis||[http://apps.webofknowledge.com.proxy.findit.dtu.dk/full_record.do?product=WOS&search_mode=CitingArticles&qid=283&SID=F6P8vdNQigRKywglhCq&page=1&doc=3 link]||X||||X||||||XRD||Catalysts, LaMnO3||<span title="LaMnO3 powder synthesized by glycine combustion synthesis with the rhombohedral and orthorhombic structures has been characterized by the combination of low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS), while the electrocatalytic activity for the oxygen reduction reaction is measured with the rotating disk electrode (RDE) method. Quantification of the surface terminations obtained by LEIS suggests that the orthorhombic LaMnO3 crystallites are near thermodynamic equilibrium as surface atomic ratios compare well with those of equilibrium morphologies computed by a Wulff construction based on computed surface energies. Both rhombohedral and orthorhombic structures present the same La/Mn atomic ratio on the surface. Electrochemical activity of the two structures is found to be the same within the error bar of our measurements. This result is in disagreement with results previously reported on the activity of the two structures obtained by the coprecipitation method [Suntivich et al. Nat. Chem. 2011, 3 (7), 546], and it indicates that the preparation method and the resulting surface termination might play a crucial role for the activity of perovskite catalysts."> Abstract</span>

Revision as of 16:28, 8 April 2020

Publication Techniques and hardware applied Sample types/Materials Description of application/Abstract
Title Type Author Web of Science XPS UPS ISS REELS Raman Additional options/hardware
Multitechnique Surface Characterization of Organic LED Material Application note P Mack X X X Organic LED's Abstract
Advantages of coincident XPS-Raman in the analysis of mineral oxides species Application note X X TiO2, CaCO3
Spectroscopic analysis of solid oxide fuel cell material with XPS Application note P Mack X
Rapid XPS image acquisition using SnapMap Application note R Simpson X SnapMap
Composition, coverage and band gap analysis of ALD-grown ultra thin films Application note P Mack X X X Band gap Gate dielectrics, HfO2, SiO2
Confirming the layer structure of an organic FET device Application note P Mack X MAGCIS Organic FET's,
Surface analysis of zeolites: An XPS, variable kinetic energy XPS, and low energy ion scattering study Publication SR Bare link X X Zeolites, Metal oxides Abstract
Surface composition analysis by low-energy ion scattering Publication, background H H Brongersma link X Abstract
Monitoring surface metal oxide catalytic active sites with Raman spectroscopy Publication, review I E Wachs link X Metal oxides Abstract
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing Publication W Cabrera link X X TEM HfO2, InGaAs, ALD Abstract
Low energy ion scattering (LEIS). A practical introduction to its theory, instrumentation, and applications Publication, review C V Cushman link X Abstract
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability Publication S McDonnell link X X AFM, ALD HfO2, MoS2 Abstract
Highly Sensitive Detection of Surface and Intercalated Impurities in Graphene by LEIS Publication S Prusa link X graphene Abstract
Reflection electron energy loss spectroscopy for ultrathin gate oxide materials Publication H C Shin [1] X X Valence band HfZrO4, Abstract
Oxygen accumulation on metal surfaces investigated by XPS, AES and LEIS, an issue for sputter depth profiling under UHV conditions Publication R Steinberger link X X AES, ARXPS, sputter profiles Oxygen on metal surfaces Abstract
Electrochemical Characterization and Quantified Surface Termination Obtained by Low Energy Ion Scattering and X-ray Photoelectron Spectroscopy of Orthorhombic and Rhombohedral LaMnO3 Powders Publication E Symianakis link X X XRD Catalysts, LaMnO3 Abstract
The Thermal Oxidation of TiAlN High Power Pulsed Magnetron Sputtering Hard Coatings as Revealed by Combined Ion and Electron Spectroscopy Publication M Wiesing link X X X Ar sputtering TiAlN Abstract
Electronic structure and energy band gap of poly(9,9-dioctylfluorene) investigated by photoelectron spectroscopy Publication L S Liao link X X Polymer Abstract
Electronic and optical properties of hafnium indium zinc oxide thin film by XPS and REELS Publication Y R Denny link X X Abstract
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