Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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|style="background:LightGrey; color:black"|Deposition rates | |style="background:LightGrey; color:black"|Deposition rates | ||
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*Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on | *Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on temperature) | ||
*TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on | *TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on temperature) | ||
*ZnO: 0.11 - 0.18 nm/cycle (Using ZnOT recipe, depending on temperature) | *ZnO: 0.11 - 0.18 nm/cycle (Using ZnOT recipe, depending on temperature) | ||
*HfO<sub>2</sub>: 0.827 nm/cycle | *HfO<sub>2</sub>: 0.827 nm/cycle | ||