Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
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*TiO<sub>2</sub> (amorphous or anatase) | *TiO<sub>2</sub> (amorphous or anatase) | ||
*ZnO | *ZnO | ||
*HfO<sub>2</sub> | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance | ||
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*TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on the temperature) | *TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on the temperature) | ||
*ZnO: 0.11-0.18 nm/cycle (Using ZnOT recipe, depending on temperature) | *ZnO: 0.11-0.18 nm/cycle (Using ZnOT recipe, depending on temperature) | ||
*HfO<sub>2</sub>: 0.827 nm/cycle | |||
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|style="background:LightGrey; color:black"|Thickness | |style="background:LightGrey; color:black"|Thickness | ||
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*TiO<sub>2</sub>: 0 - 100 nm | *TiO<sub>2</sub>: 0 - 100 nm | ||
*ZnO: 0 - 100 nm | *ZnO: 0 - 100 nm | ||
*HfO<sub>2</sub>: o - 50 nm | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||
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*anatase TiO<sub>2</sub>: 300-350 <sup>o</sup>C | *anatase TiO<sub>2</sub>: 300-350 <sup>o</sup>C | ||
*ZnO: 100 - 250 <sup>o</sup>C | *ZnO: 100 - 250 <sup>o</sup>C | ||
*HfO<sub>2</sub>: 150-300 <sup>o</sup>C | |||
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|style="background:LightGrey; color:black"|Precursors | |style="background:LightGrey; color:black"|Precursors | ||
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*O<sub>3</sub> | *O<sub>3</sub> | ||
*O<sub>2</sub> | *O<sub>2</sub> | ||
*TMAHf | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||