Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions
| Line 128: | Line 128: | ||
*GeH<sub>4</sub>:0-6.00 sccm | *GeH<sub>4</sub>:0-6.00 sccm | ||
*5%PH<sub>3</sub>:0-99 sccm | *5%PH<sub>3</sub>:0-99 sccm | ||
* | *3%B<sub>2</sub>H<sub>6</sub>:0-1000 sccm | ||
| | | | ||
*SiH<sub>4</sub>:0-60 sccm | *SiH<sub>4</sub>:0-60 sccm | ||
| Line 136: | Line 136: | ||
*Ar:0-1000 sccm | *Ar:0-1000 sccm | ||
*He: 200sccm | *He: 200sccm | ||
*5%PH<sub>3</sub>:0- | *5%PH<sub>3</sub>:0-100 sccm | ||
* | *3%B<sub>2</sub>H<sub>6</sub>:0-850 sccm | ||
|- | |- | ||
!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates | !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates | ||