Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

|style="background:WhiteSmoke; color:black"|<b>PECVD2</b>

|style="background:WhiteSmoke; color:black"|<b>PECVD3</b>

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!style="background:silver; color:black;" align="left"|Purpose  

*PBSG (Phosphorous Boron doped Silica Glass)

*Silicon oxide doped with Germanium

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!style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance

|style="background:LightGrey; color:black"|Film thickness

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*~10nm - 30µm

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|style="background:LightGrey; color:black"|Index of refraction

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*~1.4-2.1

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|style="background:LightGrey; color:black"|Step coverage

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*In general: Not so good

*PBSG: Floats at 1000^oC

|style="background:LightGrey; color:black"|Film quality

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*Not so dense film

*Hydrogen will be incorporated in the films

|style="background:LightGrey; color:black"|Process Temperature

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*300 ^oC

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|style="background:LightGrey; color:black"|Process pressure

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*~200-900 mTorr

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*5%PH₃:0-99 sccm

*5%B₂H₆:0-1000 sccm

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!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates

*Or several smaller pieces on carrier wafer

*Deposition on one side of the substrate

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| style="background:LightGrey; color:black"|Materials allowed

**with layers of silicon oxide or silicon (oxy)nitride

**Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!  

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