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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide click here]'''  
'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide click here]'''  


Deposition of Silicon Oxide can be done with either LPCVD, PECVD or by sputter technique. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point.
Deposition of Silicon Oxide can be done with either LPCVD, PECVD, by sputter technique or ALD. You can also make a silicon oxide layer by growing a [[Specific Process Knowledge/Thermal Process/Oxidation|thermal oxide]] in a hot furnace but that requires a silicon surface as a starting point.


==Deposition of Silicon Oxide using LPCVD==
==Deposition of Silicon Oxide using LPCVD==
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*[[/Deposition of Silicon Oxide using Lesker sputter tool|Deposition of Silicon Oxide using Lesker sputter tool]]
*[[/Deposition of Silicon Oxide using Lesker sputter tool|Deposition of Silicon Oxide using Lesker sputter tool]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2|Deposition of Silicon Oxide using IBE/IBSD Ionfab300]]
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/IBSD of SiO2|Deposition of Silicon Oxide using IBE/IBSD Ionfab300]]
==Deposition of Silicon Oxide using ALD==
Thin films of silicon oxide up to 50 nm can also be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. The ALD2 uses the plasma source and can therefore only deposit on one wafer at a time. The deposition takes place at 300 <sup>o</sup>C, where the growth rate is 0.1222nm on flat samples. It is also possible to deposit uniform layers on high aspect ratio structures with a growth rate of 0.1629 nm/cycle.
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/SiO2 deposition using ALD2|Deposition of Silicon Oxide using ALD2]]


==Comparison of the methods for deposition of Silicon Oxide==
==Comparison of the methods for deposition of Silicon Oxide==
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
![[Specific Process Knowledge/Thin film deposition/III-V Dielectric evaporator|III-V Dielectric evaporator]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
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|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!General description
|Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process.  
|Low Presure Chemical Vapor Deposition TEOS gives a good quality SiO2 and is a batch process.  
|Plasma Enhanced Chemical Vapor Deposition has the advantach that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature.  
|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature.  
|Sputter deposition: can be done ontop of a large range of materials. This system can only run in depostion mode in certain periods.  
|Sputter deposition: can be done on top of a large range of materials. This system can only run in deposition mode in certain periods.  
|Sputter deposition: can be done ontop of a large range of materials
|Sputter deposition: can be done on top of a large range of materials
|E-beam evaporation of siliconoxide
|E-beam evaporation of silicon oxide
|Atomic Layer deposition provides an uniform layer with a good covering even on high aspect ratio structures.
|-
|-


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*
*
| Not measured
| Not measured
|
*SiO<sub>2</sub>
|-
|-


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|
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* Thin layers (up to 200-300 nm)
* Thin layers (up to 200-300 nm)
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* Thin layers (up to 50 nm)
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*
*
| 20-250 <sup>o</sup>C
| 20-250 <sup>o</sup>C
 
|
*300 <sup>o</sup>C
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|-


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!Step Coverage
!Step Coverage
|
|
*Excelent. Very high surface mobility.
*Excellent. Very high surface mobility.
*Deposition on both sides of the substrate.
*Deposition on both sides of the substrate.
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|
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*Not Known
*Not Known
*Deposition on one side of the substrate
*Deposition on one side of the substrate
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*Excellent.
|-
|-


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*Less dense film
*Less dense film
*Incorporation of hydrogen in the film
*Incorporation of hydrogen in the film
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*
|
|
*
*
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*Pieces or
*Pieces or
*1x2" wafer  
*1x2" wafer  
|
*Several small samples
*1 50 mm wafers
*1 100 mm wafers
*1 150 mm wafer
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|-


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* Photoresist  
* Photoresist  
* Metals  
* Metals  
|
*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>
*Ti, TiO<sub>2</sub>
*Other metals (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
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|-
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