Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

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 *5%PH<math>_3</math>:0-99 sccm
 *5%B<math>_2</math>H<math>_6</math>:0-1000 sccm
+|-
+!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates
+|style="background:LightGrey; color:black"|Batch size
+|style="background:WhiteSmoke; color:black"|
+*1-3 4" wafer per run
+*1 6" wafer per run
+*Or several smaller pieces
+*Deposition on one side of the substrate
+|
+*One 4" wafer per run
+*One 6" wafer per run
+*Or several smaller pieces on carrier wafer
+*Deposition on one side of the substrate
+|-
+| style="background:LightGrey; color:black"|Materials allowed
+|style="background:WhiteSmoke; color:black"|
+*Silicon wafers, Quartz (fused silica) wafers,
+**with layers of silicon oxide or silicon (oxy)nitride
+*III-V wafers (on special carriers)
+|
+*Silicon wafers, Quarts (fused silica) wafers
+**with layers of silicon oxide or silicon (oxy)nitride
+**Other material (can be allowed if less than 3.9 cm2 is exposed to the plasma (<5% coverage of a 4" wafer), please ask!
+|-
+|}
+{| border="2" cellspacing="0" cellpadding="10"
+!colspan="2" border="none" style="background:silver; color:black;" align="center"|PECVD
+|style="background:WhiteSmoke; color:black"|<b>PECVD2</b>
+|style="background:WhiteSmoke; color:black"|<b>PECVD3</b>
+|-
+!style="background:silver; color:black;" align="left"|Purpose
+|style="background:LightGrey; color:black"|Deposition of dielectrica
+|style="background:WhiteSmoke; color:black"|
+*Silicon oxide
+*Silicon nitride
+*Silicon oxynitride
+*PBSG (Phosphorous Boron doped Silica Glass)
+*Silicon oxide doped with Germanium
+|
+*Silicon oxide
+*Silicon nitride
+*Silicon oxynitride
+*PBSG (Phosphorous Boron doped Silica Glass)
+*Silicon oxide doped with Germanium
+|-
+!style="background:silver; color:black" align="left" rowspan="4" valign="top" |Performance
+|style="background:LightGrey; color:black"|Film thickness
+|style="background:WhiteSmoke; color:black"|
+*~10nm - 30µm
+|
+*~10nm - 30µm
+|-
+|style="background:LightGrey; color:black"|Index of refraction
+|style="background:WhiteSmoke; color:black"|
+*~1.4-2.1
+|
+*~1.4-2.1
+|-
+|style="background:LightGrey; color:black"|Step coverage
+|style="background:WhiteSmoke; color:black"|
+*In general: Not so good
+*PBSG: Floats at 1000<sup>o</sup>C
+|
+*In general: Not so good
+*PBSG: Floats at 1000<sup>o</sup>C
+|-
+|style="background:LightGrey; color:black"|Film quality
+|style="background:WhiteSmoke; color:black"|
+*Not so dense film
+*Hydrogen will be incorporated in the films
+|
+*Not so dense film
+*Hydrogen will be incorporated in the films
+|-
+!style="background:silver; color:black" align="left" rowspan="3"  valign="top" |Process parameter range
+|style="background:LightGrey; color:black"|Process Temperature
+|style="background:WhiteSmoke; color:black"|
+*300 <sup>o</sup>C
+|
+*300 <sup>o</sup>C
+|-
+|style="background:LightGrey; color:black"|Process pressure
+|style="background:WhiteSmoke; color:black"|
+*~200-900 mTorr
+|
+*~200-900 mTorr
+|-
+|style="background:LightGrey; color:black"|Gas flows
+|style="background:WhiteSmoke; color:black"|
+*SiH<sub>_4</sub>:0-50 sccm
+*N<sub>_2</sub>O:0-4260 sccm
+*NH<sub>_3</sub>:0-740 sccm
+*N<sub>_2</sub>:0-3000 sccm
+*GeH<sub>_4</sub>:0-6.00 sccm
+*5%PH<sub>_3</sub>:0-100 sccm
+*3%B<sub>_2</sub>H<sub>_6</sub>:0-1000 sccm
+|
+*SiH<sub>_4</sub>:0-60 sccm
+*N<sub>_2</sub>O:0-3000 sccm
+*NH<sub>_3</sub>:0-1000 sccm
+*N<sub>_2</sub>:0-3000 sccm
+*GeH<sub>_4</sub>:0-6.00 sccm
+*5%PH<sub>_3</sub>:0-99 sccm
+*5%B<sub>_2</sub>H<sub>_6</sub>:0-1000 sccm
 |-
 !style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates