Specific Process Knowledge/Back-end processing/Laser Micromachining Tool: Difference between revisions

@@ Line 124: / Line 124: @@
 | align="left" valign="top" style="background:LightGray"|''' Comments'''
 |- style="background:LightGray" valign="top"
-| Silicon
+| Silicon 525µm
 | Green(532nm/255mm)
 | 200 kHz
@@ Line 135: / Line 135: @@
 | 1
 | N/A
-| [[silicon cutting.par]]
+| [[media:Dicing_Si_532nm_f255mm.xls|Silicon dicing green parameters]]
 | Easily break silicon in cristal plan. Depth of the groove : 25µm
 |- style="background:LightGray" valign="top"
@@ Line 143: / Line 143: @@
 | 100%
 | 2,8 W
-| 50 mm/s
+| 1000 mm/s
-| 1 burst
+| 3 bursts
-| none
+| 1 (-0,3mm)
-| 4 it.
+| 350/100
-| 1
+| 4
-| N/A
+| 50 µm
-| [[silicon cutting.par]]
+| [[media:Dicing_Si_Si3N4_1064nm_f255mm.xls|Silicon nitride cutting parameters]]
-| Easily break silicon in cristal plan. Depth of the groove : 25µm
+| Samples can easily be removed with a soft mecanical pressure. A layer of resist (AZMIR701) can be deposited on the top without influence the dicing. However, the burnt resist may induce cracks that can propagate, under the influence of the number of iteration. The blue tape may sticks to the wafer a the end of the process.
 |-
 |}