Jump to content

Specific Process Knowledge/Lithography/Coaters: Difference between revisions

VisualWikitext
Tigre (talk | contribs)
DCH-Employees-701
2,257 edits
Created page with "==SSE Spinner== 200 × 200px|thumb|The SSE spinner MAXIMUS: positioned in Cleanroom 13. SSE Spinner, Maximus 804, SSE Sister Semiconductor Equipment ..."
 
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,999 edits
No edit summary
 
(591 intermediate revisions by 8 users not shown)
Line 1: Line 1:
==SSE Spinner==
{{cc-nanolab}}
[[Image:SSEspinner2.jpg|200 × 200px|thumb|The SSE spinner MAXIMUS: positioned in Cleanroom 13.]]
SSE Spinner, Maximus 804, SSE Sister Semiconductor Equipment is a resist spinning system at Danchip which can be used for spinning  on 2", 4" and 6" substrates. The system is equipped with 2 different resists lines: AZ5214E and AZ4562 and 2 syringe lines, which can be used for spinning of e-beam resist.


'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Coaters click here]'''
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=188 LabManager]


== Process information ==
[[Category: Equipment|Lithography coaters]]
[[Category: Lithography|Coaters]]


Link to process pages
__TOC__


*[[Specific_Process_Knowledge/Photolithography/AZ5214E_standard_resist_-_positive_process|Positive process with AZ5214E resist]]
=Coater Comparison Table=
*[[Specific_Process_Knowledge/Photolithography/AZ5214E_standard_resist_-_reverse_process|Reverse process with AZ5214E resist]]
{| class="wikitable"
*[[Specific_Process_Knowledge/Photolithography/AZ4562_standard_resist_-_positive_process|Positive process with AZ4562 resist]]
|-
*[[Specific_Process_Knowledge/E-beam_lithography|E-beam process with ZEP 520A resist]]
!
! [[Specific_Process_Knowledge/Lithography/Coaters/GammaUV|Spin Coater: Gamma UV]]
! [[Specific_Process_Knowledge/Lithography/Coaters/GammaDUV|Spin Coater: Süss Stepper]]
! [[Specific_Process_Knowledge/Lithography/Coaters/GammaEbeam|Spin Coater: Gamma E-beam and UV]]
! [[Specific_Process_Knowledge/Lithography/Coaters/RCD8|Spin Coater: RCD8]]
! [[Specific_Process_Knowledge/Lithography/Coaters/labspin|Spin Coater: LabSpin 02]]
! [[Specific_Process_Knowledge/Lithography/Coaters/labspin|Spin Coater: LabSpin 03]]
! [[Specific_Process_Knowledge/Lithography/Coaters/labspin04|Spin Coater: LabSpin 04]]
! [[Specific_Process_Knowledge/Lithography/Coaters/sprayCoater|Spray Coater]]
|-
! scope=row| Purpose
|
*In-line substrate HMDS priming
*Coating and baking of
**AZ MiR 701 (29cps)
**AZ nLOF 2020
**AZ 5214E
|
*Coating and baking of
**BARC (DUV42S-6)
**KRF M230Y
**KRF M35G
**UVN2300-0.8
|
*In-line substrate HMDS priming
*Coating and baking of
**AR-P 6200 (CSAR)
**AZ 5214E
**AZ MiR 701 (29cps)
**AZ 4562
*Edge bead removal on novolac-based resist and SU-8
|
*Coating of
**SU-8
**AZ 5214E
**AZ 4562
**AZ MiR
**AZ nLOF
*Edge bead removal
|colspan="2"|
*Coating of E-beam resists
** CSAR, ZEP, PMMA/MMA, HSQ(FOx)
*Coating of UV resists
**AZ5214E, AZ4562, AZMiR701, AZnLOF, SU-8
*Coating of imprint resists
|
*Coating of
**SU-8
**mr-DWL
**other resists


NB: this tool is in PolyFabLab
|
*Spraying imprint resist
*Spraying photoresist
*Spraying of other solutions
|-
! scope=row| Substrate handling
|
* Cassette-to-cassette
* Vacuum handling and detection
* Vacuum spin chuck
|
* Cassette-to-cassette
* Vacuum handling and detection
* Vacuum spin chuck
|
* Cassette-to-cassette
* Vacuum handling and detection
* Vacuum spin chuck
|
* Single substrate
* Vacuum chuck for 4" and 6"
* 4" non-vacuum chuck for fragile substrates
|colspan="2"|
* Single substrate
* Vacuum chucks for chips, 2", 4", and 6"
* 4" edge handling chuck
|
* Single substrate
* Vacuum chucks for chips, 4", and 6"
|style="background:WhiteSmoke; color:black"|
Can handle almost any sample size and shape
|-
! scope=row| Permanent medias
|
* AZ MiR 701 (29cps) resist
* AZ nLOF 2020 resist
* AZ 5214E resist
* PGMEA solvent for backside rinse and spinner bowl cleaning
|
* DUV42S-6 (BARC)
* KRF M230Y resist
* KRF M35G resist
* PGMEA solvent for edge bead removal and backside rinse
|
* AR-P 6200.09 (CSAR) for 2", 4", and 6"
* AZ5214E for 2", 4", and 6"
* AZ MiR 701 (29cps) for 4", and 6"
* AZ4562 for 4", and 6"
* PGMEA solvent for edge bead removal, backside rinse, and spinner bowl cleaning
|
No permanent media
|colspan="2"| Only manual dispense
| Only manual dispense
| No permanent media
|-
! scope=row| Manual dispense option
|
* No manual dispense
* Syringe dispense (60cc) of PGMEA-based resist
|
* No manual dispense
* Syringe dispense (60cc) of PGMEA and anisole-based resist
|
* No manual dispense
* Syringe dispense (30cc) of PGMEA and anisole-based resist (2" only)
| Only manual dispense
|colspan="2"| Only manual dispense
| Only manual dispense
| Two syringe pumps
|-
! scope=row| Spindle speed
| 10 - 6000 rpm
| 10 - 6000 rpm
| 10 - 6000 rpm
| 10 - 5000 rpm (3000 rpm with non-vacuum chuck)
|colspan="2"| 100 - 8000 rpm (3000 rpm with edge handling chuck)
| 100 - 8000 rpm
| NA
|-
! scope=row| Gyrset
| No
| No
| No
| Optional (max. speed 3000 rpm)
|colspan="2"| No
| No
| NA
|-
! scope=row| Substrate size
|
*50 mm wafers (tool change required)
*100 mm wafers
*150 mm wafers
*200 mm wafers (tool change required)
|
*100 mm wafers
*150 mm wafers
*200 mm wafers (may require tool change)
|
*2" or 50 mm wafers
*100 mm wafers
*150 mm wafers
|
*100 mm wafer
*150 mm wafer
|colspan="2"|
*50 mm wafers
*100 mm wafers
*150 mm wafer
*small pieces down to 5x5 mm2
|
*100 mm wafers
*150 mm wafer
*small pieces down to 5x5 mm2
|
Any sample(s) that fit inside machine
|-
! scope=row| Batch size
| 1 - 25
| 1 - 25
| 1 - 25
| 1
|colspan="2"| 1
| 1
| 1
|-
! scope=row| Allowed substrate materials
|
*Silicon
*Glass


'''No resist or crystalbond allowed in the HMDS module'''
|
*Silicon
*Glass
|
*Silicon
*III-V materials
*Glass


Information about resist can be found here:
'''No resist or crystalbond allowed in the HMDS module'''
|
All cleanroom materials except III-V materials
|colspan="2"|
*Silicon
*III-V materials
*Glass
|
All PolyFabLab materials
|
*All chemicals to be spray coated must be approved specifically for spray coating
*Any non-toxic, non-particulate and non-crosslinking material is likely to be approved
|-
|}


* [http://groups.mrl.uiuc.edu/dvh/pdf/AZ5214E.pdf AZ5214E ]
=Spin coating=
* [http://www.microchemicals.eu/micro/az_4500_series.pdf AZ4562]
The typical spin coating process consists of the following steps:
* [http://www.zeonchemicals.com/pdfs/ZEP520A.pdf ZEP520A]
#Priming (typically HMDS) followed by cooling to room temperature
#Resist dispense (rotation: static or dynamic rotation)(arm: stationary or moving)
#*Optional: Acceleration to a low spin speed if dynamic dispense is used
#*Optional: Resist spreading at low spin speed for spreading thicker resists
#Spin-off
#Backside rinse (typically during spin-off)
#Optional: Edge-bead removal
#Softbake (contact or proximity)
#Cooling to room temperature


==KS Spinner==
[[Image:KSspinner.JPG|200×200px|right|thumb|The KS spinner is placed in Cleanroom 3.]]
At Danchip we have RC8-THP system which is one of the SUSS MicroTech spinners.


The main purpose of this equipment is experimental spinning the different resist.The spinner has one resist line, AZ5214E, for automatic dispense. All other resist dispenses manually from syringe or disposable pipettes. All SU8 spinning are done on this machine.
After priming, the wafer is cooled to room temperature and then transferred to the spin coater. If static dispense is used, the wafer is not rotating during the resist dispense. In the case of dynamic dispense, the wafer rotates at low spin speed during the dispense. The dispense arm is normally stationary during dispense, but some substrates may require the arm to move slowly across the substrate area while dispensing. Moving arm dispensing is usually only done with a rotating substrate.
 
The machine can be also used for spinning on the "difficult" surfaces like the substrates with holes, backside structures and unusual shapes.


'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off.  
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=43 LabManager]


== Process information ==
==Spin-off==
The spin-off cycle determines the thickness of the resist coating. For a given resist, the thickness is primarily a function of the spin-off speed and the spin-off time, both following an inverse power-law:


Link to process pages
<math>y = k \sdot x^{-a}</math>


*[[Specific_Process_Knowledge/Photolithography/AZ5214E_standard_resist_-_positive_process|Positive process with AZ5214E resist]]
The acceleration to the spin-off speed also influences the thickness, but the effect is dependent on previous steps. The spin-off is usually a simple spin at one speed, but it may be comprised of several steps at different spin speeds. After spin-off, the wafer is decelerated.
*[[Specific_Process_Knowledge/Photolithography/AZ5214E_standard_resist_-_reverse_process|Reverse process with AZ5214E resist]]
*[[Specific_Process_Knowledge/Photolithography/AZ4562_standard_resist_-_positive_process|Positive process with AZ4562 resist]]
*[[Specific_Process_Knowledge/Photolithography/SU8|Process with SU8 resist]]


Information about resist can be found here:
The coated thickness, <math>t</math>, as a function of the spin-off speed, <math>w</math>, follows an inverse power-law:


* [http://groups.mrl.uiuc.edu/dvh/pdf/AZ5214E.pdf AZ5214E ]
<math>t=k \sdot w^{-a}</math>
* [http://www.microchemicals.eu/micro/az_4500_series.pdf AZ4562]
* [http://microchem.com/pdf/SU-82000DataSheet2000_5thru2015Ver4.pdf SU8 2005]
* [http://microchem.com/pdf/SU-82000DataSheet2025thru2075Ver4.pdf SU8 2075]


==Manual Spinner( Polymers)==
The constant, <math>k</math>, is a function of the resist viscosity and solid content, as well as the spin-off time. The exponent, <math>a</math>, is dependent on solvent evaporation, and is typically ~½ for UV resists. This means that from the thickness <math>t_1</math> achieved at spin speed <math>w_1</math>, one can estimate the spin speed <math>w_2</math> needed to achieve thickness <math>t_2</math> using the relation:
[[Image:Opticoat.jpg|200×200px|right|thumb|The Manual Spinner(Polymers) is placed in fumehood in Cleanroom 3.]]


The Manual Spinner(Polymers), Opticoat SB20+, from SSE Sister Semiconductor Equipment, are dedicated for spinning of imprint polymers, e-beam resist in small batches, SU8 resist and other polymers with extra addictive like color, nano particles etc.
<math>t_1 \sdot w_1^{1/2} = t_2 \sdot w_2^{1/2} \rArr w_2 = w_1 \sdot \frac{t_1^2}{t_2^2}</math>


There are 2 hotplates with temperature range up to 250C, placed in the same fumehood, which can be used for baking before/after spinning.


For thick SU-8, however, <math>a</math> is observed to be ~1 (probably due to the low solvent content and/or the formation of skin). In this case, the relation simply becomes:


'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
<math>t_1 \sdot w_1 = t_2 \sdot w_2 \rArr w_2 = w_1 \sdot \frac{t_1}{t_2}</math>
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=251 LabManager]


== Process information ==
==Backside rinse==
If the spin speed is too low during resist dispense, resist may creep over the edge of the wafer and onto the backside. Some resist tend to leave fine strings of resist protruding from the edge of the wafer, or folded onto the backside, an effect sometimes referred to as "cotton candy".


Link to process pages
Any resist on the edge and backside of the wafer will contaminate the end effector, softbake hotplate, and subsequent wafers.


==SÜSS Spinner-Stepper==
In a backside rinse step, solvent administered through a nozzle to the backside of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the rinse, a short spin at medium spin speed dries the wafer before the softbake.  
[[Image:Gamma_2M.jpg|200×200px|right|thumb|The SÜSS Spinner-Stepper is placed in Stepper room.]]


This spinner is dedicated for spinning DUV resists. The spinner is fully automatic and can run up to 25 substrates in a batch  4", 6", and 8" size. The machine is equipped with the 3 resist lines, a automatic syringe system and a solvent line for cleaning and back-side rinse.
During the backside rinse solvent inevitably creeps onto the front side of the wafer. This effect may be used to dissolve and subsequently remove an edge-bead, but it may also leave the rim of the wafer exposed. As an alternative to backside rinse, a wafer, which is contaminated on the backside, may be softbaked in proximity, in order to protect the hotplate from contamination. This leaves front side coating intact, but also leaves the backside dirty.


==Edge bead==
'''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
During spin coating, resist builds up at the edge of the wafer due to the change in surface tension at the edge, as well as extra drying from turbulence created by the wafer edge.
Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=279 LabManager]


Information about resist can be found here:
This phenomenon is called edge-bead. Dependent on spin coating parameters, the coating may be several times thicker at the edge than in the central area. In a subsequent hard contact exposure step (mask aligner), this edge-bead introduces an undesired proximity gap, which reduces the lateral resolution, and may even cause the wafer to stick to the mask.


* Bottom Anti Reflection Coating (BARC)[http://www.brewerscience.com/products/arc/dry-etch-arc-coatings/248nm-products/duv42s DUV 42S-6 ].
In an edge-bead removal step, solvent administered through a nozzle positioned at the edge of the wafer, while spinning at low or medium spin speed, dissolves the resist and washes it away. After the removal, a short spin at medium spin speed dries the wafer before the softbake. Dependent on the viscosity (solvent content) of the resist after the edge-bead removal, this drying spin may cause the resist to re-flow and create a secondary edge-bead. In some cases, it may be necessary to (partially) softbake the resist before edge-bead removal.
*[[Media:Datasheet_DUV42S.pdf |Datasheet DUV42S-6]].
*Positive DUV resist for spinning in 300-600 thickness range [[Media:M230Y_PSM_annular_130C_PEB.pdf|KRF M230Y]].


== Process information ==
==Softbake==
After spin coating, the solvent in the resist must be evaporated in a baking step, in order to solidify the resist. This softbake can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface, either in direct contact on the manual hotlpates or by resting on shallow bumps 150 µm above the hotplate in the Gamma tools. In a proximity bake, the wafer is first moved into proximity, e.g. 1mm, of the hotplate surface, then held there (on the lift pins) for the duration of the bake.


Link to process pages
=Decommisioned tools=
 
<span style="color:red">The spin track was decommissioned 2018-02-01.</span>
==Equipment performance and process related parameters==
 
{| border="2" cellspacing="0" cellpadding="2"
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>SSE Spinner</b>
|style="background:WhiteSmoke; color:black"|<b>KS Spinner</b>
|-
!style="background:silver; color:black;" align="center"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*Spinning and baking of AZ2514E resist
*Spinning and baking of AZ4562 resist
*Spinning and baking of e-beam resist
|style="background:WhiteSmoke; color:black"|
*Spinning and baking of AZ2514E resist
*Spinning and baking of AZ4562 resist
*Spinning and baking of SU8 resist
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Substrate handling
|style="background:WhiteSmoke; color:black"|
* Cassette-to-cassette
* Edge handling chuck
|style="background:WhiteSmoke; color:black"|
* Single substrate
* Non-vacuum chuck for fragile substrates
|-
|style="background:LightGrey; color:black"|Permanent media
|style="background:WhiteSmoke; color:black"|
* AZ5214E resist
* AZ4562 resist
* Acetone for chuck cleaning
* Acetone for drip pan
|style="background:WhiteSmoke; color:black"|
* AZ5214E resist
* PGMEA for edge bead removal
* Acetone for chuck cleaning
|-
|style="background:LightGrey; color:black"|Manual dispense option
|style="background:WhiteSmoke; color:black"|
* 2 automatic syringes
|style="background:WhiteSmoke; color:black"|
* yes
* pneumatic dispense for SU8 resist
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Parameter 1
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
*Range
|-
|style="background:LightGrey; color:black"|Parameter 2
|style="background:WhiteSmoke; color:black"|
*Range
|style="background:WhiteSmoke; color:black"|
*Range
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*<nowiki>24</nowiki> 50 mm wafers
*<nowiki>24</nowiki> 100 mm wafers
*<nowiki>24</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>1</nowiki> 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
|style="background:WhiteSmoke; color:black"|
*Allowed material 1
*Allowed material 2
*Allowed material 3
|-
|}


<br clear="all" />
[[Specific Process Knowledge/Lithography/Coaters/Spin_Track_1_%2B_2_processing|Information about decommissioned tool can be found here.]]
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Coaters"