Specific Process Knowledge/Lithography/UVExposure: Difference between revisions

@@ Line 76: / Line 76: @@
 |style="background:LightGrey; color:black"|Alignment accuracy
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-*TSA ±2µm
+*TSA: ±2 µm
-*BSA ±5µm
+*BSA: ±5 µm
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-*TSA ±1µm
+*TSA: ±1 µm
-*BSA ±2µm
+*BSA: ±2 µm
 |style="background:WhiteSmoke; color:black"|
-~1 µm
+±2 µm<br>(±1 µm possible)
 |style="background:WhiteSmoke; color:black"|
-~1 µm
+*TSA: ± 0.5 µm
+*BSA: ± 1 µm
 |style="background:WhiteSmoke; color:black"|
-~1 µm
+*TSA: ± 0.5 µm
+*BSA: ± 1 µm
 |style="background:WhiteSmoke; color:black"|
-~1 µm
+±1 µm
 <!--|style="background:WhiteSmoke; color:black"|-->
@@ Line 471: / Line 473: @@
 |style="background:LightGrey; color:black"|Alignment modes
 |style="background:WhiteSmoke; color:black" colspan="2"|
-*Top side (TSA), ±2µm (±1µm has been demonstrated)
+*Top side (TSA), ±1µm (machine spec: ±2µm)
-*Backside (BSA), ±5µm (±2µm has been demonstrated)
+*Backside (BSA), ±2µm (machine spec: ±5µm)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates