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[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]]
[[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]]


Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.
Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 100 mm and 150 mm wafers using two separate coater stations. It can be reconfigured to enable coating 2" substrates on Coater1, but this requires a tool change.


The 2" coater station is equipped with 1 resist line, as well as 1 syringe line:
Coater1 is equipped with 2 resist lines, as well as 1 syringe line:
*AR-P 6200.09 (CSAR)
*AR-P 6200.09 (CSAR)
*ZEP 520A diluted 1:2
*Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.''
*Syringe, which can be used for various resists (anisole-based or PGMEA-based). ''We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.''




The 4"/6" coater station is equipped with 4 different resists lines:  
Coater2 is equipped with 4 different resists lines:  
*AZ 5214E
*AZ 5214E
*AZ MiR 701
*AZ MiR 701
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR)
* AR-P 6200.09 (CSAR)
* ZEP 520A diluted 1:2 (pay-per-use)
* AZ 5214E
* AZ 5214E
* AZ MiR 701 (29cps)
* AZ MiR 701 (29cps)
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|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* AR-P 6200.09 (CSAR): 170-500 nm
* AR-P 6200.09 (CSAR): 170-500 nm
* ZEP 520A diluted 1:2: 55-120 nm
* AZ 5214E: 1.5-5 µm
* AZ 5214E: 1.5-5 µm
* AZ MiR 701: 1.5-4 µm
* AZ MiR 701: 1.5-4 µm
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|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
* 50 mm wafers
* 50 mm wafers (requires tool change)
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
* 150 mm wafers

Latest revision as of 13:52, 5 August 2026

Spin Coater: Gamma E-beam and UV

Spin Coater: Gamma E-beam & UV in E-5

Spin Coater: Gamma E-beam and UV was installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, HMDS vapour priming, and baking modules. The system handles 100 mm and 150 mm wafers using two separate coater stations. It can be reconfigured to enable coating 2" substrates on Coater1, but this requires a tool change.

Coater1 is equipped with 2 resist lines, as well as 1 syringe line:

  • AR-P 6200.09 (CSAR)
  • ZEP 520A diluted 1:2
  • Syringe, which can be used for various resists (anisole-based or PGMEA-based). We currently recommend against using the syringe, as the process setup is quite demanding. Use a manual spin coater instead.


Coater2 is equipped with 4 different resists lines:

  • AZ 5214E
  • AZ MiR 701
  • AR-P 6200.09 (CSAR)
  • AZ 4562

The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and requires batch processing - it is not for processing a few wafers now and then.

Link to information about coater chuck size and hotplate pin positions.

Training video

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager - requires login

Process information

Equipment performance and process related parameters

Purpose
  • HMDS priming
  • Spin coating of anisole based E-beam resists
  • Spin coating of PGMEA based UV resists
  • Soft baking
  • Edge bead removal (CSAR and novolac-based UV resists)
Resist
  • AR-P 6200.09 (CSAR)
  • ZEP 520A diluted 1:2 (pay-per-use)
  • AZ 5214E
  • AZ MiR 701 (29cps)
  • AZ 4562
  • 30cc syringe dispense
Performance HMDS contact angle

  60 - 80° (on Silicon)

Coating thickness
  • AR-P 6200.09 (CSAR): 170-500 nm
  • ZEP 520A diluted 1:2: 55-120 nm
  • AZ 5214E: 1.5-5 µm
  • AZ MiR 701: 1.5-4 µm
  • AZ 4562: 5-25 µm
Process parameters Priming temperature

  120 °C

Spin speed

  10 - 6000 rpm

Spin acceleration

  10 - 10000 rpm/s

Hotplate temperature

  25 - 200 °C

Cool plate temperature

  21 °C

Substrates Substrate size
  • 50 mm wafers (requires tool change)
  • 100 mm wafers
  • 150 mm wafers
Allowed materials

  Silicon, III-V, and glass

  Resists and crystalbond are not allowed in the HMDS module

Batch

  1 - 25


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