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Line 29: Line 29:
*Back Side Alignment
*Back Side Alignment
*UV exposure
*UV exposure
OBS: this tool is in PolyFabLab
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Top Side Alignment
*Top Side Alignment
Line 50: Line 51:
*Maskless UV exposure
*Maskless UV exposure
*Direct laser writing
*Direct laser writing
OBS: this tool is in PolyFabLab
<!--|style="background:WhiteSmoke; color:black"|
<!--|style="background:WhiteSmoke; color:black"|
*UV exposure
*UV exposure
Line 55: Line 57:


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
Line 72: Line 74:


|-
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
|style="background:LightGrey; color:black"|Alignment accuracy
|style="background:WhiteSmoke; color:black"|
*TSA: ±2 µm
*BSA: ±5 µm
|style="background:WhiteSmoke; color:black"|
*TSA: ±1 µm
*BSA: ±2 µm
|style="background:WhiteSmoke; color:black"|
±2 µm<br>(±1 µm possible)
|style="background:WhiteSmoke; color:black"|
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
*TSA: ± 0.5 µm
*BSA: ± 1 µm
|style="background:WhiteSmoke; color:black"|
±1 µm
<!--|style="background:WhiteSmoke; color:black"|-->
 
|-
|style="background:LightGrey; color:black"|Exposure light
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*350W Hg lamp
*350W Hg lamp
*i-line filter (365nm notch filter)<br>Intensity in Constant Intensity mode:<br>8mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm bandpass filter)
*303nm filter optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*500W Hg-Xe lamp
*500W Hg-Xe lamp
*i-line filter (365nm notch filter)<br>Intensity in Constant Intensity mode:<br>11mW/cm<sup>2</sup> @ 365nm
*i-line filter (365nm bandpass filter)
*UV350 optics optional
*UV250 optics optional
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
365nm LED
365nm LED
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
375nm laserdiodes
375nm laser diode array
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
405nm laserdiodes
405nm laser diode array
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*365nm LED
*365nm LED
*405nm diode laser
*405nm laser diode
<!--|style="background:WhiteSmoke; color:black"|
<!--|style="background:WhiteSmoke; color:black"|
*1000 W Hg-Xe lamp
*1000 W Hg-Xe lamp
Line 138: Line 157:


|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 10x10 mm<sup>2</sup>
*1 50 mm wafer
*1 100 mm wafer
*1 100 mm wafer
*1 150 mm wafer
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1 small sample, down to 10x10 mm<sup>2</sup>
*1 small sample, down to 10x10 mm<sup>2</sup>
Line 177: Line 193:
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except copper and steel
*All PolyFabLab materials
*Dedicated 2inch chuck for III-V materials
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*All cleanroom materials except copper and steel
*All cleanroom materials except copper and steel
Line 196: Line 211:


==Aligner: MA6-1==
==Aligner: MA6-1==
[[Image:KSAligner in E-4.jpg|300x300px|thumb|The Aligner: MA6-1 is located in PolyFabLab]]
[[Image:KSAligner in E-4.jpg|400px|thumb|The Aligner: MA6-1 is located in PolyFabLab.]]


SUSS Mask Aligner MA6 is designed for high resolution photolithography.  
SUSS Mask Aligner MA6 is designed for high resolution photolithography.  
Line 203: Line 218:




'''Training videos:'''
'''Training videos:'''  
<br/>The training videos were made for MA6-2, but operation of MA6-1 is very similar as they are exactly the same model. Due to a different power supply, however, procedures for ignition and intensity control of the lamp is different for MA6-1. Please refer to the manual for the correct procedures.


[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]
[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]
Line 209: Line 225:
[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]
[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]


 
The user manual(s), quality control procedure(s) and results, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager]  - '''requires login'''
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager]  - '''requires login'''


===Exposure dose===
===Exposure dose===
Line 220: Line 235:
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].


<!--
===Quality Control (QC)===
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
Line 260: Line 276:
Power supply and/or lamp will be adjusted if intensity is outside the limit.
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}
|}
-->


===Equipment performance and process related parameters===
===Equipment performance and process related parameters===
Line 280: Line 297:
| style="background:LightGrey; color:black"|Exposure light/filters
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*broadband (i-, g-, h-line)
*365 nm (i-line)
*365 nm (i-line)
*303 nm
*broadband (i-, g-, h-line), requires tool change
*(303 nm, requires tool change)
|-
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:LightGrey; color:black"|Minimum structure size
Line 291: Line 308:
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
*5x5 inch
*7x7 inch
*special holder for 4 x 2" designs on 5x5 inch
|-
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA)
*Top side (TSA), ±2µm
*Backside (BSA)
*Backside (BSA), ±5µm
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
* small pieces 1x1cm
Mask exposure and alignment:
* 50 mm wafers
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
Flood exposure:
* samples up to 150 mm wafers
|-
|-
| style="background:LightGrey; color:black"|Allowed materials
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
All PolyFabLab materials
 
Dedicated chuck for III-V materials
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
Line 322: Line 335:


==Aligner: MA6-2==
==Aligner: MA6-2==
[[Image:AlignerMA6-2 in E-4.jpg|300x300px|thumb|The Aligner: MA6-2 is placed in E-4]]
[[Image:AlignerMA6-2 in E-4.jpg|400px|thumb|The Aligner: MA6-2 is located in E-4.]]


The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.  
The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography.  
Line 395: Line 408:


*Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
*Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
**Alignment of smaller separations is possible using the "scan microscope" function
*Maximum distance between TSA microscope objectives: 160 mm
*Maximum distance between TSA microscope objectives: 160 mm
*TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)
*TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)
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**2": X +/-  8-22mm; Y +/- 0-6mm
**2": X +/-  8-22mm; Y +/- 0-6mm
**4": X +/- 14-46mm; Y +/- 0-10mm
**4": X +/- 14-46mm; Y +/- 0-10mm
**6": X +/- 14-69mm; Y +/- 0-10mm
**6": X +/- 14-69mm; Y +/- 0-10mm (OBS: Max. separation of BSA microscopes is 100mm)




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|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA)
*Top side (TSA), ±1µm (machine spec: ±2µm)
*Backside (BSA)
*Backside (BSA), ±2µm (machine spec: ±5µm)
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
Line 498: Line 512:
== Aligner: Maskless 01 ==
== Aligner: Maskless 01 ==


[[Image:Heidelberg_MLA100.jpg|300x300px|thumb|Aligner: Maskless 01 positioned in E-5 (2017)]]
[[Image:Heidelberg_MLA100.jpg|400px|thumb|Aligner: Maskless 01 is located in E-4.]]


The logon password for the PC is "mla" (without quotation marks).
The logon password for the PC is "mla" (without quotation marks).
Line 521: Line 535:
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_01_processing#Optimal_use_of_the_maskless_aligner|Optimal use of the maskless aligner]]
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
! QC:
! Dose and defocus test on 1.5µm AZ5214E
! QC limits
|-
|Dose test
|
Step size is 5 mJ/cm<sup>2</sup><br>
Test range is last QC value ± 10 mJ/cm<sup>2</sup> (5 steps total)
|none
|-
|Defoc test
|
Step size is 1 defoc<br>
Test range is last QC value ± 4 (5 steps total)
|none
|-
|}
|}
|}
<br/>
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=422 The QC procedure for Aligner: Maskless 01 (MLA1)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=422 The newest QC data for Aligner: Maskless 01 (MLA1)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center"
! QC Recipe:
! Alignment accuracy test
! QC limits
|-
|Topside alignment
|
Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.<br>
Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
| Must be better than 1µm
|-
|}
| align="center" valign="top"|
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
<br/>


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===
Line 560: Line 635:
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Top side only
Top side only, ±2µm (±1µm can be achieved)


|-
|-
Line 575: Line 650:
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
All cleanroom materials
<br>Total height variation across the substrate must be less than ±40 µm - including wafer bow
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
Line 585: Line 661:


==Aligner: Maskless 02==
==Aligner: Maskless 02==
[[File:Aligner MLA 2.jpg|400px|thumb|Aligner: Maskless 02 is located in E-5.]]
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH (installed 2019 as WMI (0.6µm resolution), rebuilt to WMII 2023).


Line 611: Line 688:
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_02_processing#Alignment|Alignment]]
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
! QC Recipe:
! Dose and defocus test on 1.5µm AZ5214E
|-
|Dose test
|Last QC value ± 20 mJ/cm<sup>2</sup> (9 steps total)
|-
|Defoc test
|Last QC value ± 8 (9 steps total)
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|Dose
|none
|-
|Defoc
|none
|-
|}
|-
|}
Dose and defoc values are reported in the QC data sheet.
|}
<br/>
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 02 (MLA2) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=440 The QC procedure for Aligner: Maskless 02 (MLA2)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=440 The newest QC data for Aligner: Maskless 02 (MLA2)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
! QC Recipe:
! Alignment accuracy test
|-
|Topside alignment
|Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.
Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
|-
|Backside alignment
|Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.
Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 02 (MLA2)
|-
|Topside alignment error
|>0.5µm
|-
|Backside alignment error
|>1µm
|-
|}
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
<br/>


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===
Line 653: Line 810:
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment
*Top side alignment, ±0.5µm
*Backside alignment
*Backside alignment, ±1.0µm
*Field alignment (chip-by-chip TSA)
*Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm<sup>2</sup> area)


|-
|-
Line 671: Line 828:
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
All cleanroom materials
<br>Total height variation across the substrate must be less than ±90 µm - including wafer bow
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
Line 683: Line 841:


==Aligner: Maskless 03==
==Aligner: Maskless 03==
[[File:Aligner MLA 3.jpg|400px|thumb|Aligner: Maskless 03 is located in E-5.]]
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.
MLA150 WMII maskless aligner from Heidelberg Instruments GmbH, installed 2020.


Line 705: Line 864:
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Features|Features]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment|Alignment]]
*[[Specific_Process_Knowledge/Lithography/Aligners/Aligner:_Maskless_03_processing#Alignment|Alignment]]
===Quality Control (QC)===
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Dose and Defoc'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=464 The QC procedure for Aligner: Maskless 03 (MLA3)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=464 The newest QC data for Aligner: Maskless 03 (MLA3)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
! QC Recipe:
! Dose and defocus test on 1.5µm AZ5214E
|-
|Dose test
|Last QC value ± 20 mJ/cm<sup>2</sup> (9 steps total)
|-
|Defoc test
|Last QC value ± 8 (9 steps total)
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 03 (MLA3)
|-
|Dose
|none
|-
|Defoc
|none
|-
|}
|-
|}
Dose and defoc values are reported in the QC data sheet.
|}
<br/>
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
|bgcolor="#98FB98" |'''Quality Control (QC) for Aligner: Maskless 03 (MLA3) - Alignment'''
|-
|
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=464 The QC procedure for Aligner: Maskless 03 (MLA3)] - '''requires login'''<br>
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=464 The newest QC data for Aligner: Maskless 03 (MLA3)] - '''requires login'''
{| {{table}}
| align="center" |
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
! QC Recipe:
! Alignment accuracy test
|-
|Topside alignment
|Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing.
Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported.
|-
|Backside alignment
|Expose an overlay design after automatic alignment to 4 backside alignment marks and applying scaling and shearing. Rotate the wafer 180° and repeat.
Alignment accuracy in 9 points across a 100mm wafer is measured, half the average alignment error is reported.
|-
|}
| align="center" valign="top"|
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: Maskless 03 (MLA3)
|-
|Topside alignment error
|>0.5µm
|-
|Backside alignment error
|>1µm
|-
|}
|-
|}
Camera offsets will be adjusted if alignment error is outside the limit.
|}
<br/>


=== Equipment performance and process related parameters ===
=== Equipment performance and process related parameters ===
Line 745: Line 984:
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side alignment
*Top side alignment, ±0.5µm
*Backside alignment
*Backside alignment, ±1.0µm
*Field alignment (chip-by-chip TSA)
*Field alignment (chip-by-chip TSA), ±0.25µm (within 5x5mm<sup>2</sup> area)


|-
|-
Line 762: Line 1,001:
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
All cleanroom materials
All cleanroom materials
<br>Total height variation across the substrate must be less than ±90 µm - including wafer bow
|-
|-
|style="background:LightGrey; color:black"|Batch
|style="background:LightGrey; color:black"|Batch
Line 772: Line 1,012:


== Aligner: Maskless 04 ==
== Aligner: Maskless 04 ==
<!--
[[Image:Heidelberg_uMLA.JPG|400px|thumb|Aligner: Maskless 04 is located in PolyFabLab in building 347.]]
<span style="background:#FF2800">THIS SECTION IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]
-->
 
[[Image:Heidelberg_uMLA.JPG|300x300px|thumb|Aligner: Maskless 04 is installed in PolyFabLab in building 347.]]


The logon password for the PC is "mla" (without quotation marks).
The logon password for the PC is "mla" (without quotation marks).
Line 840: Line 1,076:
|style="background:LightGrey; color:black"|Alignment modes
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Top side only
Top side only, ±1µm


|-
|-
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|style="background:WhiteSmoke; color:black" colspan="2"|
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All PolyFabLab materials with sufficient stiffness and flatness.
All PolyFabLab materials with sufficient stiffness and flatness.
<br>Total height variation across the substrate must be less than ±80 µm - including wafer bow
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|style="background:LightGrey; color:black"|Batch
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