Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
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[[Category: Equipment|Lithography]] | |||
[[Category: Lithography]] | |||
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=General Process Information= | =General Process Information= | ||
Processing on Developer TMAH UV-lithography consists of the following steps: | Processing on Developer TMAH UV-lithography consists of the following steps: | ||
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*Puddle development | *Puddle development | ||
*Rinse | *Rinse | ||
'''Features of Developer TMAH UV-lithography:''' | '''Features of Developer TMAH UV-lithography:''' | ||
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'''2.2µm AZ 5214E:''' (image reversal) | '''2.2µm AZ 5214E:''' (image reversal) | ||
*Reversal bake: 60s-120s @ 110°C | *Reversal bake: 60s-120s @ 110°C | ||
*Flood exposure: ~ | *Flood exposure: ~500 mJ/cm<sup>2</sup> | ||
*Development: SP 60s | *Development: SP 60s | ||
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Multiple puddle: | Multiple puddle: | ||
*'''( | *'''(1019) DCH 100mm MP 3x60s''' | ||
*'''(1010) DCH 100mm MP 4x60s''' | *'''(1010) DCH 100mm MP 4x60s''' | ||
*'''(1012) DCH 100mm MP 5x60s''' | *'''(1012) DCH 100mm MP 5x60s''' | ||
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''Sequence names and process parameters (Sequence no. 3000-3999):'' | ''Sequence names and process parameters (Sequence no. 3000-3999):'' | ||
'''(3001) DCH 100mm PEB60s@110C+SP60s'''<br> | |||
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 60s' development. | A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 60s' development. | ||
'''(3005) DCH 100mm PEB60s@110C+SP30s'''<br> | |||
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 30s' development. | A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 100mm SP 30s' development. | ||
'''(3010) DCH 150mm PEB60s@110C+SP60s'''<br> | |||
A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 150mm SP 60s' development. | A combination of the 'DCH PEB 110C 60s' post-exposure bake and the 'DCH 150mm SP 60s' development. | ||