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Unless otherwise stated, this page is written by DTU Nanolab internal
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XRD SmartLab

The Rigaku SmartLab is an advanced XRD for measuring on thin films. All thin films can be measured without fixating the sample, as the system has a so called In-Plane arm.

The user manual(s), user APV(s), technical information, and contact information can be found in LabManager:

XRD SmartLab in LabManager - requires login

Various measurement types including X-Ray reflectivity, Rocking curve, Theta-2theta, and Pole figures are described here:

Process information

The measurement settings and results of the pre-acceptance test are described in this document, also found on the Lab Manager:

(FAT) Factory Acceptance Test - requires login

The same measurement were completed as part of the acceptance, but no report was generated. In addition the inspection certificate is available here:

(SAT) Site Acceptance Test - requires login

Software for analysis

Please see the Data Analysis section at the main XRD page.

Characterization of thin films using X-ray reflectivity (XRR)

Implementing the XRR method the user can calculate thickness, density, and roughness of the deposited material. The XRR is also widely employed for multilayer stack analysis.

Here are some results available:

Characterization of e-beam deposited Al thin films.

Characterization of DC sputtered Al thin films.

Characterization of ALD deposited Al₂O₃ and TiO₂ ultrathin layers.

Characterization of Sputtered deposited CrSi bilayer.

Characterization of Sputtered deposited MgO thin films.

Characterization of Sputtered deposited Sc thin films.

Characterization of Sputtered deposited ScN thin films.

Grazing Incidence X-ray Diffraction XRD (GiXRD)

Evaluation of Instrumental broading in GiXRD.

θ/2θ X-ray Diffraction

Evaluation of Instrumental broadening in symmetrical θ/2θ measurements.

Equipment performance and process related parameters

Equipment		XRD SmartLab
Purpose	Crystal structure analysis and thin film thickness measurement	Phase ID Crystal Size Crystallinity Quality and degree of orientation 3D orientation Latice strain Composition Twist 3D lattice constant Thickness Roughness Density
X-ray generator	Maximum rated output	3 kW
	Rated tube voltage	20 to 45 kV
	Rated tube current	2 to 60 mA
	Type	Sealed tube
	Target	Cu
	Focus size	0.4 mm x 8 mm (Line/Point)
Goniometer	Scanning mode	incident / receiver coupled or independent
	Goniomenter radius	300 mm
	Minimum step size	0.0001° (0.36")
	Sample stage	χ:-5~+95° φ:0~360° Z:-4~+1 mm X,Y:±50 mm for a 100 mm wafer Rx,Ry:-5~+5°
Optics	Incident side	Cross Beam Optics(CBO) Ge(220)x2 monochromator In-Plane Parallel Slit Collimator (PSC) Soller slit Variable divergence slit
Optics	Receiver side	Automatic variable scattering slit Automatic variable receiver slit Parallel slit analysers (PSA) Ge(220)x2 analyser
Substrates	Substrate size	up to 150 mm wafers; thickness up to 21 mm
	Allowed materials	All materials allowed in the cleanroom

@@ Line 2: / Line 2: @@
 <i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b><br>
-All images and photos on this page belonges to <b>DTU Nanolab</b></i>
+All images and photos on this page belongs to <b>DTU Nanolab</b></i>
@@ Line 50: / Line 50: @@
 * Characterization of [[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_MgO#X-Ray_Reflectivity|Sputtered deposited MgO thin films]].
+* Characterization of [[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium/Sc_Sputtering_in_Cluster_Lesker_PC3#X-ray_Reflectivity_(XRR)|Sputtered deposited Sc thin films]].
+* Characterization of [[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Scandium_Nitride/ScN_Reactive_Sputtering_in_Cluster_Lesker_PC3#X-ray_Reflectivity_(XRR)|Sputtered deposited ScN thin films]].
 <!-- * Characterization of [[Specific_Process_Knowledge/Characterization/XRD/XRD_SmartLab/ALD_deposited_alumina_and_titania_XRR_and_SE_comparison|ALD deposited Al<sub>2</sub>O<sub>3</sub> and TiO<sub>2</sub> ultrathin layers]].-->
+==Grazing Incidence X-ray Diffraction XRD (GiXRD)==
+* Evaluation of [[Specific Process Knowledge/Characterization/XRD/XRD SmartLab/Instrumental broading in GiXRD|Instrumental broading in GiXRD]].
+==θ/2θ X-ray Diffraction==
+* Evaluation of [[Specific Process Knowledge/Characterization/XRD/XRD SmartLab/Instrumental broading in T2T|Instrumental broadening in symmetrical θ/2θ measurements]].
 ==Equipment performance and process related parameters==
@@ Line 108: / Line 121: @@
 .4 mm x 8 mm (Line/Point)
 |-
-!style="background:silver; color:black" align="center" valign="center" rowspan="5"|Goniometer
+!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Goniometer
 |style="background:LightGrey; color:black"|
 Scanning mode
@@ Line 133: / Line 146: @@
 *Rx,Ry:-5~+5°
 |-
-|style="background:LightGrey; color:black"|
-Sample size
-|style="background:WhiteSmoke; color:black"|
-Diameter: 150 mm
-Thickness: 0~21 mm
-|-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Optics
 |style="background:LightGrey; color:black"|Incident side
@@ Line 158: / Line 166: @@
 |style="background:LightGrey; color:black"|Substrate size
 |style="background:WhiteSmoke; color:black"|
-up to 150 mm wafers
+up to 150 mm wafers; thickness up to 21 mm
 |-
 | style="background:LightGrey; color:black"|Allowed materials
 |style="background:WhiteSmoke; color:black"|
-All materials
+All materials allowed in the cleanroom
 |-
 |}
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