Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions

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=ALD1=


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/ALD_Picosun_R200 click here]'''


=ALD Picosun 200=
''This page is written by DTU Nanolab internal''


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/ALD_Picosun_R200 click here]'''
[[Category: Equipment|Thin film]]
[[Category: Thin Film Deposition|ALD]]


== ALD - Atomic layer deposition ==
== ALD - Atomic layer deposition ==
[[image:ALD.jpg|300x300px|right|thumb|Picosun R200 ALD, positioned in cleanroom F-2.]]
[[image:ALD.jpg|300x300px|right|thumb|ALD1, positioned in cleanroom F-2.]]


The Picosun R200 ALD (atomic layer deposition) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>,TiO<sub>2</sub> or Pt (not testet yet) on different samples.  
The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub> (amorphous or anatase) and HfO<sub>2</sub> on different samples. Layer can be up to 100 nm thick, see the table below.  


Each process is using two different precurcors. The reaction takes place in cycles. During each cycle a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precurcor is removed from the chamber before the next one is introduced. In that way the ALD layer will be deposited atomic layer by atomic layer.  
Each process is using two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited atomic layer by atomic layer by ALD.  


In order to ensure that the ALD reactor has the same temperature eveywhere, it has a dual chamber structure. The inner chamber is the ALD reactor with the sample holder, and the outer chamber is a vacuum chamber that is isolating the reactor from room air. The space between the two chambers is called an intermediate space (IMS). The IMS is connected to a nitrogen carrier gas line.  
In order to ensure that the ALD reactor has the same temperature everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is a vacuum chamber that is isolating the reactor from room air. The space between the two chambers is called an intermediate space (IMS), and this is constantly purged with nitrogen. A sample holder is placed in the reactor chamber.  


When the reactor chamber is heated up or cooled down, it will take some time before the sample holder and the sample reach the desired temperature. Thus, it is important to include a temperature stabilization time in the process recipes.  
When the reactor chamber is heated up or cooled down, it will take some time before the sample holder and the sample reaches the desired temperature. Thus, it is important to include a temperature stabilization time in the process recipes.  


The ALD deposition takes place in the reactor chamber. All precursor and nitrogen carrier gas lines are connected to the reactor chamber through separate gas lines. The percursors pulse time is controlled using special ALD valves, that allow very short precursors pulses to be introduced into the ALD reactor and a at the same time allow a constant nitrogen purge.
The ALD deposition takes place in the reactor chamber. All precursor and nitrogen carrier gas lines are connected to the reactor chamber through separate gas lines. The precursor pulse time is controlled using special ALD valves, that allow very short precursors pulses to be introduced into the ALD reactor and at the same time allow a constant nitrogen purge.  


The ALD reaction takes place under vacuum, thus a vacuum pump is connected to the bottom of the ALD reactor. The pump is located in the basement.  
The ALD reaction takes place under vacuum, thus a vacuum pump is connected to the bottom of the ALD reactor chamber. The pump is located in the basement.  


The liquid precursors (TMA, TiCl4, MeCpPtMe<sub>3</sub> and H<sub>2</sub>O) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Ozone is generated by use of an ozone generator that is located on the side of the machine.  
The liquid precursors (H<sub>2</sub>O, TMA, TiCl<sub>4</sub> and TEMAHf) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Only four of the precursors (normally <sub>2</sub>O, TMA, TEMAHf and TiCl<sub>4</sub>) can be connected at the same time. Ozone is generated by use of an ozone generator that is located on the side of the machine.  


It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer.  
It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch (up to five wafers at a time) or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer. However, for some materials the uniformity will only be good for the top sample(s) in a minibatch holder.   


A short presentation with some information about the ALD tool can be found [[Media:ProcessMeeting ALD 2013-12-06_1.pdf|here]].
A short presentation with some information about the ALD tool can be found [[Media:ProcessMeeting ALD 2013-12-06_1.pdf|here]].
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'''The user manual, the user APV and contact information can be found in LabManager:'''
'''The user manual, the user APV and contact information can be found in LabManager:'''


[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=321 ALD Picosun R200 info page in LabManager],
[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=321 ALD1 info page in LabManager],


== Process information ==
== Process information ==


*[[Specific Process Knowledge/Thin Film deposition/ALD/Standard recipes on the ALD tool|Standard recipes on the ALD tool]]
*[[/Standard recipes on the ALD tool|Standard recipes on the ALD 1 tool]]
*[[Specific Process Knowledge/Thin Film deposition/ALD/Results from the ALD acceptance test|Results from the ALD acceptance test]]
*[[/ALD multilayers|Advanced recipes involving fabrication of multilayers]]
*[[Specific Process Knowledge/Thin Film deposition/ALD/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD]]
*[[/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]]
*[[/TiO2 deposition using ALD|TiO<sub>2</sub> deposition using ALD 1]]
*[[/ZnO deposition using ALD|ZnO deposition using ALD 1. ''Obsolete - ZnO should now be deposited in ALD2'']]
*[[/AZO deposition using ALD|Al-doped ZnO (AZO) deposition using ALD 1. ''Obsolete - AZO should now be deposited in ALD2'']]
<!--*[[/HfO2 deposition using ALD|HfO<sub>2</sub> deposition using ALD 1]]-->
*[[/HfO2 deposition using ALD new page|HfO<sub>2</sub> deposition using ALD 1]]


==Equipment performance and process related parameters==
==Equipment performance and process related parameters==
Line 42: Line 50:


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment  
|style="background:WhiteSmoke; color:black"|<b>ALD Picosun R200</b>
|style="background:WhiteSmoke; color:black"|<b>ALD1</b>
|-
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose  
!style="background:silver; color:black;" align="center" width="60"|Purpose  
|style="background:LightGrey; color:black"|ALD (atomic layer deposition) of
|style="background:LightGrey; color:black"|ALD (atomic layer deposition) of
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>
*Al<sub>2</sub>O<sub>3</sub> (amorphous)
*TiO<sub>2</sub>  
*TiO<sub>2</sub> (amorphous or anatase)
*Pt (not tested yet)
*HfO<sub>2</sub> (polycrystalline)
Please note that it might not be possible to deposit all marials at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
|style="background:LightGrey; color:black"|Deposition rates
|style="background:LightGrey; color:black"|Deposition rates
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.88 - 0.97 nm/cycle (Using the "Al2O3" recipe, depending of the temperature)  
*Al<sub>2</sub>O<sub>3</sub>: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on temperature)  
*TiO<sub>2</sub>: Not measured
*TiO<sub>2</sub>: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on temperature)
*Pt: Not measured
*HfO<sub>2</sub>: 0.0827 nm/cycle
|-
|-
|style="background:LightGrey; color:black"|Thickness
|style="background:LightGrey; color:black"|Thickness
Line 63: Line 70:
*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
*Al<sub>2</sub>O<sub>3</sub>: 0 - 100 nm
*TiO<sub>2</sub>: 0 - 100 nm
*TiO<sub>2</sub>: 0 - 100 nm
*Pt: ?
*HfO<sub>2</sub>: 0 - 100 nm
<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i>
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
|style="background:LightGrey; color:black"|Temperature
|style="background:LightGrey; color:black"|Temperature window
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Al<sub>2</sub>O<sub>3</sub>: 150 - 350 <sup>o</sup>C
*Al<sub>2</sub>O<sub>3</sub>: 150 - 300 <sup>o</sup>C
*TiO<sub>2</sub>: ?
*Amorphous TiO<sub>2</sub>: 100 - 150 <sup>o</sup>C
*Pt: ?
*Anatase  TiO<sub>2</sub>: 300 - 350 <sup>o</sup>C
*HfO<sub>2</sub>: 150 - 350 <sup>o</sup>C
|-
|-
|style="background:LightGrey; color:black"|Precursors
|style="background:LightGrey; color:black"|Precursors
Line 78: Line 87:
*H<sub>2</sub>O
*H<sub>2</sub>O
*O<sub>3</sub>
*O<sub>3</sub>
*O<sub>2</sub>
*O<sub>2</sub> - Not available at the moment
*MeCpPtMe<sub>3</sub> (not mounted yet)
*TEMAHf
Please note that not all precursors might be mounted on the tool at the same time
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*1-5 4" wafers
*1 200 mm wafer
*1-5 6" wafers
*1-5 100 mm wafers
*1-5 150 mm wafers
*1-3 200 mm wafers
*Several smaller samples  
*Several smaller samples  
|-
|-
Line 92: Line 102:
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*Silicon  
*Silicon  
*Silicon oxide  
*Silicon oxide, silicon nitride
*Silicon nitrides
*Quartz/fused silica
*Al, Al<sub>2</sub>O<sub>3</sub>  
*Al, Al<sub>2</sub>O<sub>3</sub>  
*Ti, TiO<sub>2</sub>  
*Ti, TiO<sub>2</sub>  
*Pt
*Other metals (use dedicated carrier wafers)
*Quartz/fused silica
*III-V materials (use dedicated carrier wafers)
*Polymers (depending on the melting point/deposition temperature, use carrier wafers)
|-  
|-  
|}
|}

Latest revision as of 09:57, 30 April 2024

ALD1

Feedback to this page: click here

This page is written by DTU Nanolab internal

ALD - Atomic layer deposition

ALD1, positioned in cleanroom F-2.

The ALD1 (Picosun R200 ALD) tool is used to deposit a very thin layer of Al2O3, TiO2 (amorphous or anatase) and HfO2 on different samples. Layer can be up to 100 nm thick, see the table below.

Each process is using two different precursors. The reaction takes place in cycles. During each cycle, a very short pulse of each precursor is introduced into the ALD reaction chamber in turns, and in-between each precursor pulse the chamber is purged with nitrogen. All reactions have to take place on the sample surface, thus it is very important that each precursor is removed from the chamber before the next one is introduced. In that way, materials can be deposited atomic layer by atomic layer by ALD.

In order to ensure that the ALD reactor has the same temperature everywhere, it has a dual chamber structure. The inner chamber is the reactor chamber, and the outer chamber is a vacuum chamber that is isolating the reactor from room air. The space between the two chambers is called an intermediate space (IMS), and this is constantly purged with nitrogen. A sample holder is placed in the reactor chamber.

When the reactor chamber is heated up or cooled down, it will take some time before the sample holder and the sample reaches the desired temperature. Thus, it is important to include a temperature stabilization time in the process recipes.

The ALD deposition takes place in the reactor chamber. All precursor and nitrogen carrier gas lines are connected to the reactor chamber through separate gas lines. The precursor pulse time is controlled using special ALD valves, that allow very short precursors pulses to be introduced into the ALD reactor and at the same time allow a constant nitrogen purge.

The ALD reaction takes place under vacuum, thus a vacuum pump is connected to the bottom of the ALD reactor chamber. The pump is located in the basement.

The liquid precursors (H2O, TMA, TiCl4 and TEMAHf) are located in the cabinet below the ALD chamber. When these precursors are not in use, the manual valves have to be closed. Only four of the precursors (normally 2O, TMA, TEMAHf and TiCl4) can be connected at the same time. Ozone is generated by use of an ozone generator that is located on the side of the machine.

It is possible to change the sample holder, so that ALD deposition can take place on different samples, e.g. a small wafer batch (up to five wafers at a time) or a number of smaller samples. Samples are loaded manually into the sample holder by use of a tweezer. However, for some materials the uniformity will only be good for the top sample(s) in a minibatch holder.

A short presentation with some information about the ALD tool can be found here.


The user manual, the user APV and contact information can be found in LabManager:

ALD1 info page in LabManager,

Process information

Equipment performance and process related parameters

Equipment ALD1
Purpose ALD (atomic layer deposition) of
  • Al2O3 (amorphous)
  • TiO2 (amorphous or anatase)
  • HfO2 (polycrystalline)
Performance Deposition rates
  • Al2O3: ~ 0.075 - 0.097 nm/cycle (Using the "Al2O3" recipe, depending on temperature)
  • TiO2: 0.041 - 0.061 nm/cycle (Using the "TiO2" recipe, depending on temperature)
  • HfO2: 0.0827 nm/cycle
Thickness
  • Al2O3: 0 - 100 nm
  • TiO2: 0 - 100 nm
  • HfO2: 0 - 100 nm

As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.

Process parameter range Temperature window
  • Al2O3: 150 - 300 oC
  • Amorphous TiO2: 100 - 150 oC
  • Anatase TiO2: 300 - 350 oC
  • HfO2: 150 - 350 oC
Precursors
  • TMA
  • TiCl4
  • H2O
  • O3
  • O2 - Not available at the moment
  • TEMAHf
Substrates Batch size
  • 1 200 mm wafer
  • 1-5 100 mm wafers
  • 1-5 150 mm wafers
  • 1-3 200 mm wafers
  • Several smaller samples
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafers)
  • III-V materials (use dedicated carrier wafers)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafers)