Specific Process Knowledge/Thermal Process/A4 Phosphor Pre-dep furnace: Difference between revisions

Latest revision as of 14:08, 31 January 2023

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Phosphorus Pre-dep furnace (A4)

The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl₃.

A4 is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.

The user manual, technical information and contact information can be found in LabManager:

Phosphorus Pre-dep furnace (A4)

Process knowledge

Dope with Phosphorus

Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters

Purpose		Phosphorus doping/pre-deposition using POCl₃
Process parameter range	Process Temperature	900-1150 ^oC
	Process pressure	1 atm (atmospheric pressure)
	Gasses on the system	POCl₃ N₂
Substrates	Batch size	1-30 100 mm wafers
Substrates	Substrate materials allowed	Silicon wafers (RCA cleaned)

@@ Line 1: / Line 1: @@
 '''Feedback to this page''': '''[mailto:thinfilm@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/A4_Phosphor_Pre-dep_furnace click here]'''
+''This page is written by DTU Nanolab  internal''
+[[Category: Equipment |Thermal A4]]
+[[Category: Thermal process|Furnace]]
+[[Category: Furnaces|A4]]
 ==Phosphorus Pre-dep furnace (A4)==
-[[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom 2]]
+[[Image:A4.JPG|thumb|300x300px|Phosphorus Pre-dep furnace (A4). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]]
-The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the formula POCl<sub>3</sub>.
+The Phosphorus Pre-dep furnace (A4) is used to dope Si wafers with phosphorus to make conductive structures, etch stop layers etc. The doping source is phosphoryl chloride (commonly called phosphorus oxychloride) which is a colourless liquid with the chemical formula POCl<sub>3</sub>.
+A4 is the lowest furnace tube in the A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Be aware of that all wafers (including new wafers) have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace.
-A4 is the lowest furnace tube in the A-stack positioned in cleanroom 2. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.
 '''The user manual, technical information and contact information can be found in LabManager:'''
-'''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=83 Phosphorus Predep furnace (A4)]'''
+'''[http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=83 Phosphorus Pre-dep furnace (A4)]'''
 == Process knowledge ==
 *[[Specific Process Knowledge/Thermal Process/Dope with Phosphorus|Dope with Phosphorus]]
-==Overview of the performance of the Phosphoris Pre-dep furnace and some process related parameters==
+==Overview of the performance of the Phosphorus Pre-dep furnace and some process related parameters==
-{| border="2" cellspacing="0" cellpadding="0"
+{| border="2" cellspacing="0" cellpadding="2"
 |-
 !style="background:silver; color:black;" align="center"|Purpose
-|style="background:LightGrey; color:black"|Doping of Phosphor
-|style="background:WhiteSmoke; color:black"|
-|-
-!style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|
 |style="background:WhiteSmoke; color:black"|
-*Look at Process knowladge
+*Phosphorus doping/pre-deposition using POCl<sub>3</sub>
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
@@ Line 36: / Line 37: @@
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*1 atm (atmospheric pressure)
 |-
 |style="background:LightGrey; color:black"|Gasses on the system
 |style="background:WhiteSmoke; color:black"|
-*POCl<sub>3</sub>, N<sub>2</sub>
+*POCl<sub>3</sub>
+*N<sub>2</sub>
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 4" wafer (or 2" wafers) per run
+*1-30 100 mm wafers
 |-
-| style="background:LightGrey; color:black"|Substrate material allowed
+| style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
 *Silicon wafers (RCA cleaned)
 |-
 |}