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| == UV Exposure Comparison Table ==
| | {{cc-nanolab}} |
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| | [[Category: Equipment|Lithography exposure]] |
| | [[Category: Lithography|Exposure]] |
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| {| border="2" cellspacing="0" cellpadding="2"
| | __TOC__ |
| | |
| !colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
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| |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#KS Aligner|KS Aligner]]</b>
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| |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#EVG Aligner|EVG Aligner]]</b>
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| |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#III-V Aligner|III-V Aligner]]</b>
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| |style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/UVExposure#Inclined UV Lamp|Inclined UV Lamp]]</b>
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| | =UV Exposure Comparison Table= |
| | {| class="wikitable" |
| | |- |
| | ! |
| | ! [[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1|Aligner: MA6-1]] |
| | ! [[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2|Aligner: MA6-2]] |
| | ! [[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA1|Aligner: Maskless 01]] |
| | ! [[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA2|Aligner: Maskless 02]] |
| | ! [[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3|Aligner: Maskless 03]] |
| | ! [[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4|Aligner: Maskless 04]] |
| |- | | |- |
| !style="background:silver; width:100px; color:black;" align="center"|Purpose | | ! scope=row| Purpose |
| |style="background:LightGrey; color:black"|
| | | |
| |style="background:WhiteSmoke; color:black"|
| | *Top side alignment |
| *TS and BS Alignment | | *Back side alignment |
| *UV exposure
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *TS and BS Alignment
| |
| *UV exposure
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *TS Alignment | |
| *UV exposure | | *UV exposure |
| |style="background:WhiteSmoke; color:black"|
| | NB: this tool is in PolyFabLab |
| | | |
| | *Top side alignment |
| | *Back side alignment |
| *UV exposure | | *UV exposure |
| | | *Bond alignment |
| | | |
| | *Top side alignment |
| | *Maskless UV exposure |
| | | |
| | *Top side alignment |
| | *Back side alignment |
| | *Maskless UV exposure |
| | | |
| | *Top side alignment |
| | *Back side alignment |
| | *Maskless UV exposure |
| | | |
| | *Top side alignment |
| | *Maskless UV exposure |
| | *Direct laser writing |
| | NB: this tool is in PolyFabLab |
| | |- |
| | ! scope=row| Minimum feature size |
| | | ~1 µm || ~1 µm || ~1 µm || ~1 µm || ~1 µm || ~1 µm |
| |- | | |- |
| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance | | ! scope=row| Alignment accuracy |
| |style="background:LightGrey; color:black"|Minimum feature size | | | |
| |style="background:WhiteSmoke; color:black"|
| | *TSA: ±2 µm |
| *1.25µm down to 1.0µm
| | *BSA: ±5 µm |
| |style="background:WhiteSmoke; color:black"| | | | |
| *1.25µm | | *TSA: ±1 µm |
| |style="background:WhiteSmoke; color:black"| | | *BSA: ±2 µm |
| *2µm | | | |
| |style="background:WhiteSmoke; color:black"| | | ±2 µm<br>(±1 µm possible) |
| | | |
| | *TSA: ± 0.5 µm |
| | *BSA: ± 1 µm |
| | | |
| | *TSA: ± 0.5 µm |
| | *BSA: ± 1 µm |
| | | |
| | ±1 µm |
| |- | | |- |
| |style="background:LightGrey; color:black"|Exposure light/filters/spectrum
| | ! scope=row| Exposure light source |
| |style="background:WhiteSmoke; color:black"|
| | | |
| *350W Hg-lamp | | *350 W Hg lamp |
| *365 nm notch filter, intensity in Constant Intensity mode: 7mW/cm2 @ 365 nm | | *i-line filter (365nm band pass filter) |
| *303 nm filter optional
| | | |
| |style="background:WhiteSmoke; color:black"|
| | *500 W Hg-Xe lamp |
| *350W Hg-lamp | | *i-line filter (365nm band pass filter) |
| *SU8 filter (long-pass), intensity in Constant Power mode: 7mW/cm2 @ 365 nm | | | |
| *365 nm filter optional
| | 365 nm LED |
| | | | |
| |style="background:WhiteSmoke; color:black"|
| | 375 nm laser diode array |
| *350W Hg-lamp
| | | |
| *the hole spectrum of 350W hg-lamp
| | 405 nm laser diode array |
| |style="background:WhiteSmoke; color:black"|
| | | |
| *1000 W Hg(Xe)lamp source | | *365 nm LED |
| *near UV (350-450nm), mid UV (260-320nm), and deep UV (220-260nm) | | *405 nm laser diode |
| | |
| |- | | |- |
| |style="background:LightGrey; color:black"|Exposure mode
| | ! scope=row| Exposure mode |
| |style="background:WhiteSmoke; color:black"| | | | |
| *proximity, soft, hard, vacuum contact | | *Flood exposure |
| |style="background:WhiteSmoke; color:black"|
| | *Proximity |
| *proximity, soft, hard, vacuum contact | | *Contact: |
| |style="background:WhiteSmoke; color:black"|
| | **Soft contact |
| *proximity, soft, hard, vacuum contact | | **Hard contact |
| |style="background:WhiteSmoke; color:black"|
| | **Vacuum contact |
| | | |
| *Flood exposure | | *Flood exposure |
| *Proximity exposure with home-made chuck and maskholder | | *Proximity |
| | | *Contact: |
| |-
| | **Soft contact |
| !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
| | **Hard contact |
| |style="background:LightGrey; color:black"|Positive Process
| | **Vacuum contact |
| |style="background:WhiteSmoke; color:black"|
| | | |
| *dose 42mW/cm2 for 1,5um AZ5214E resist | | *Projection: |
| *dose 56mW/cm2 for 2,2um AZ5214E resist
| | **Pneumatic auto-focus |
| |style="background:WhiteSmoke; color:black"|
| | | |
| *dose 23mW/cm2 for 1,5um AZ5214E resist | | *Projection: |
| *dose 35mW/cm2 for 2,2um AZ5214E resist | | **Optical auto-focus |
| |style="background:WhiteSmoke; color:black"|
| | **Pneumatic auto-focus |
| * | | | |
| |style="background:WhiteSmoke; color:black"|
| | *Projection: |
| *polymer depended | | **Pneumatic auto-focus |
| | | | |
| |-
| | *Projection: |
| |style="background:LightGrey; color:black"|Negative Process
| | **Optical auto-focus |
| |style="background:WhiteSmoke; color:black"|
| | **Pneumatic auto-focus |
| *dose 21mW/cm2 for 1,5um AZ5214E resist | | *Direct laser writing: |
| *dose 28mW/cm2 for 2,2um AZ5214E resist | | **Optical auto-focus |
| then 210mW/cm2 flood exposure after PEB
| | **Pneumatic auto-focus |
| |style="background:WhiteSmoke; color:black"| | |
| *dose 16mW/cm2 for 1,5um AZ5214E resist
| |
| *dose 18mW/cm2 for 2,2um AZ5214E resist | |
| then 210mW/cm2 flood exposure after PEB
| |
| |style="background:WhiteSmoke; color:black"|
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| * | |
| |style="background:WhiteSmoke; color:black"|
| |
| *polymer depended | |
| | |
| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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| |style="background:LightGrey; color:black"|Batch size
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| |style="background:WhiteSmoke; color:black"|
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| *<nowiki>1</nowiki> small sample | |
| *<nowiki>1</nowiki> 50 mm wafers | |
| *<nowiki>1</nowiki> 100 mm wafers | |
| *<nowiki>1</nowiki> 150 mm wafers | |
| |style="background:WhiteSmoke; color:black"|
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| *<nowiki>1</nowiki> 50 mm wafers | |
| *<nowiki>1</nowiki> 100 mm wafers | |
| *<nowiki>25</nowiki> 150 mm wafers with automatic handling | |
| |style="background:WhiteSmoke; color:black"|
| |
| *<nowiki>1</nowiki> small samples | |
| *<nowiki>1</nowiki> 50 mm wafers | |
| *<nowiki>1</nowiki> 100 mm wafers | |
| *<nowiki>1</nowiki> 150 mm wafers | |
| |style="background:WhiteSmoke; color:black"|
| |
| *all sizes up to 8inch | |
| |-
| |
| | style="background:LightGrey; color:black"|Allowed materials
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| |style="background:WhiteSmoke; color:black"|
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| *All cleanroom materials | |
| *Dedicated 2inch chuck for III-V materials | |
| |style="background:WhiteSmoke; color:black"|
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| *All cleanroom materials except III-V materials | |
| |style="background:WhiteSmoke; color:black"|
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| *III-V compounds | |
| |style="background:WhiteSmoke; color:black"|
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| *All cleanroom materials
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| |-
| |
| |}
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| <br clear="all" />
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| == KS Aligner ==
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| '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#KS_Aligner click here]'''
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| [[Image:KSaligner.jpg|300x300px|thumb|The KSaligner MA6 is placed in Cleanroom 3.]]
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| SUSS Mask Aligner MA6 is designed for high resolution photolithography.
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| The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied.
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| Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.
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| '''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
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| Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager]
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| <br clear="all" />
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| == EVG Aligner ==
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| '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Aligner-6inch click here]'''
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| [[Image:EVG620.jpg|300x300px|thumb|right|Aligner-6inch EVG620 is placed in Cleanroom 13.]]
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| EVG620 aligner is designed for high resolution photolithography.
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| The machine can be used for 2, 4 and 6 inch substrates. Cassette-to-cassette handling option is available only for 6inch substrates.
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| The automatic pattern recognition software is available for the special alignment marks design recommended of EVGroup. Please contact Danchip staff for further information.
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| Available exposure mode: proximity, soft, hard and vacuum contact.
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| Two alignment options are available: top side alignment (TSA) and back side alignment (BSA). IR-light alignment also an option.
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| '''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
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| Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=201 LabManager]
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| <br clear="all" />
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| == III-V Aligner ==
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| '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#III-V_Aligner click here]'''
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| The SÜSS MicroTec MA1006 mask aligner located in the III-V cleanroom is dedicated for processing of III-V compound semiconductors.
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| Specific use of the mask aligner can be found in the standard resist recipes.
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| [[Image:IMG_3078.jpg|300x300px|thumb|III-V Aligner positioned in III-V cleanroom ]]
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| {| border="2" cellspacing="0" cellpadding="10"
| |
| |-
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| !style="background:silver; color:black" align="left" valign="top" rowspan="6"|Performance
| |
| |style="background:LightGrey; color:black"|substrate size
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| |style="background:WhiteSmoke; color:black"|
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| small pieces 1x1 cm up to 2inch"
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| |-
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| |style="background:LightGrey; color:black"|Exposure mode
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| |style="background:WhiteSmoke; color:black"|
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| soft contact, hard contact, proximity, flood exposure
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| |- | | |- |
| | style="background:LightGrey; color:black"|Exposure light/filters
| | ! scope=row| Batch size |
| |style="background:WhiteSmoke; color:black"| | | | 1 || 1 || 1 || 1 || 1 || 1 |
| 365 nm, 405 nm
| |
| |- | | |- |
| |style="background:LightGrey; color:black"|Minimum structure size | | ! scope=row| Allowed materials |
| |style="background:WhiteSmoke; color:black"| | | | All PolyFabLab materials |
| ~1µm
| | | |
| | *All cleanroom materials except copper and steel |
| | *Dedicated chuck for III-V materials |
| | | All cleanroom materials |
| | | All cleanroom materials |
| | | All cleanroom materials |
| | | All PolyFabLab materials |
| |- | | |- |
| |style="background:LightGrey; color:black"|Mask size
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| |style="background:WhiteSmoke; color:black"|
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| 5x5inch
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| |-
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| |style="background:LightGrey; color:black"|Alignment modes
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| |style="background:WhiteSmoke; color:black"|
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| Top side only
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| |-
| |
| |} | | |} |
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| | =Mask vs Maskless aligners= |
| | Comparison study between mask aligners and maskless aligners can be found [[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA|here]]. |
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| <br clear="all" /> | | =Decommisioned tools= |
| | | <span style="color:red">Inclined UV lamp was decommissioned 2023.</span> |
| ==Inclined UV Lamp==
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| | |
| '''Feedback to this section''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/UVExposure#Inclined_UV_lamp click here]'''
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| [[Image:Inclined UV lamp_1.jpg|300×300px|right|thumb|Inclined UV lamp is placed in Cleanroom 13.]]
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| The Inclined UV lamp is 1000 W Hg(Xe)lamp source designed for near UV, 350-450nm, mid UV, 260-320nm, and deep UV, 220-260nm exposures of resists and polymers. The exposure source can be also used to make an inclined exposure in air or in the media tank.
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| The tool was purchased in February 2009 from Newport. The exposure lamp has a official name: Oriel Flood Exposure Source, unit 92540. All other parts of equipment: substrate and mask holder with media tank, exhaust box around the tool, timer controller, were designed and build at DTU Danchip workshop.
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| The substrate and mask holder with a media tank was designed as part of Master Thesis of DTU Nanotech, Andres Kristensen group. The exhaust box was made as part of safety and the timer controller was build to control exposure time.
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| The technical specification and the general outline of the equipment can be found in LabManager.
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| '''The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager:'''
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| Equipment info in [http://labmanager.danchip.dtu.dk/function.php?module=Machine&view=view&mach=259 LabManager]
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| <br clear="all" />
| | [[Specific Process Knowledge/Lithography/UVExposure/aligner_inclinedUV|Information about decommissioned tool can be found here.]] |