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|-
|-
!
!
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher03|Plasma Asher 3: Descum]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher04|Plasma Asher 4 (Clean)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher05|Plasma Asher 5 (Dirty)]]
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
! [[Specific_Process_Knowledge/Lithography/Strip/resistStrip|Resist strip]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
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*Resist stripping
*Resist stripping
*Resist descum
*Resist descum
*Surface treatment
*Other ashing of organic material
|
|
*Resist stripping
*Resist stripping
*Resist descum
*Resist descum
*Surface treatment
*Other ashing of organic material
| Resist stripping
| Resist stripping
| Metal lift-off
| Metal lift-off
Line 52: Line 56:
| 150-1000 W
| 150-1000 W
| 150-1000 W
| 150-1000 W
| NA
| NA
|-
! scope=row style="text-align: left;" | Process pressure
| 0.8 mbar
| 0.5-1.5 mbar
| 0.5-1.5 mbar
| NA
| NA
| NA
| NA
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| NA
| NA
| NA
| NA
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
! scope=row style="text-align: left;" | Process temperature
| Up to ~100°C
| Up to ~100°C
| Up to ~100°C
| Up to ~65°C
| Up to ~65°C
|-
! scope=row style="text-align: left;" | Process time
| 1-10 minutes
|
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|
|
*NMP (Remover 1165)
*NMP (Remover 1165)
Line 107: Line 144:
|
|
*Silicon substrates
*Silicon substrates
*III-V substrates
*III-V substrates (only on Si carrier)
*Glass substrates
*Glass substrates
*Polymer substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No iron (Fe) containing films'''</span>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*Silicon substrates
*III-V substrates
*III-V substrates
*Glass substrates
*Glass substrates
*Polymer substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span>
*Silicon substrates
*Silicon substrates
*III-V substrates (only if clean)
*III-V substrates (only if clean)
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*Films, or patterned films, of any material except type IV (Pb, Te)
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
= Plasma Ashing process parameters=
{| class="wikitable"
|-
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment (PA4 & PA5) !! Other ashing of organic material (PA4 & PA5)
|-
! scope=row style="text-align: left;" | Process pressure
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|-
! scope=row style="text-align: left;" | Process gasses
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub>
*N<sub>2</sub>
*CF<sub>4</sub>
|
*O<sub>2</sub>
|-
! scope=row style="text-align: left;" | Process power
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
|-
! scope=row style="text-align: left;" | Process time
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
|}
<br clear="all" />
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}


=Decommisioned tools=
=Decommisioned tools=

Latest revision as of 10:11, 25 June 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process pressure 0.8 mbar 0.5-1.5 mbar 0.5-1.5 mbar NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Process temperature Up to ~100°C Up to ~100°C Up to ~100°C Up to ~65°C Up to ~65°C
Process time 1-10 minutes
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only on Si carrier)
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) containing films
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) or Copper (Cu) containing films
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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