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= Strip Comparison Table =
= Strip Comparison Table =
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
{| class="wikitable"
 
|-
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
!
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_1|Plasma Asher 1]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher03|Plasma Asher 3: Descum]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher04|Plasma Asher 4 (Clean)]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher05|Plasma Asher 5 (Dirty)]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip/resistStrip|Resist strip]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b>
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
 
|-
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose  
! scope=row style="text-align: left;" | Purpose  
|style="background:LightGrey; color:black"|
| Resist descum
|style="background:WhiteSmoke; color:black"|
|
All purposes
*Resist stripping
|style="background:WhiteSmoke; color:black"|
*Resist descum
Clean wafers only, no metal
*Surface treatment
|style="background:WhiteSmoke; color:black"|
*Other ashing of organic material
Resist descum
|
|style="background:WhiteSmoke; color:black"|
*Resist stripping
Resist strip, no metal lift off
*Resist descum
|style="background:WhiteSmoke; color:black"|
*Surface treatment
Lift-off
*Other ashing of organic material
 
| Resist stripping
| Metal lift-off
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Method
! scope=row style="text-align: left;" | Method
|style="background:LightGrey; color:black"|
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
Plasma ashing
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
Plasma ashing
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
Plasma ashing
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
! scope=row style="text-align: left;" | Process gasses
|style="background:LightGrey; color:black"|Process gasses
| O<sub>2</sub> (50 sccm)
|style="background:WhiteSmoke; color:black"|
|
*O<sub>2</sub> (0 - 400 sccm)
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub>
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub>
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0 - 400 sccm)
*N<sub>2</sub> (0-500 sccm)
*N<sub>2</sub>
*CF<sub>4</sub> (0-200 sccm)
|style="background:WhiteSmoke; color:black"|
| NA
*O<sub>2</sub> (flow unknown)
| NA
|style="background:WhiteSmoke; color:black"|
|-
*NA
! scope=row style="text-align: left;" | Process power
|style="background:WhiteSmoke; color:black"|
| 10-100 W (10-100%)
*NA
| 150-1000 W
 
| 150-1000 W
| NA
| NA
|-
|-
|style="background:LightGrey; color:black"|Max. process power
! scope=row style="text-align: left;" | Process pressure
|style="background:WhiteSmoke; color:black"|
| 0.8 mbar
*1000 W
| 0.5-1.5 mbar
|style="background:WhiteSmoke; color:black"|
| 0.5-1.5 mbar
*1000 W
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*100% (power unknown)
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Solvent
! scope=row style="text-align: left;" | Process solvent
|style="background:WhiteSmoke; color:black"|
| NA
*NA
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*NA
|
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NMP (Remover 1165)
*NMP (Remover 1165)
*Rinse in IPA
*IPA (rinsing agent)
|style="background:WhiteSmoke; color:black"|
|
*NMP (Remover 1165)
*NMP (Remover 1165)
*Rinse in IPA
*IPA (rinsing agent)
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Process temperature
|style="background:LightGrey; color:black"|Batch size
| Up to ~100°C
|style="background:WhiteSmoke; color:black"|
| Up to ~100°C
*1 small sample
| Up to ~100°C
*1 50 mm wafer
| Up to ~65°C
*1 - 30 100 mm wafers
| Up to ~65°C
*1 - 25 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 - 30 100 mm wafers
*1 - 25 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 100 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
*1 - 25 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
*1 - 25 150 mm wafers
|-
|-
|style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Process time
|style="background:WhiteSmoke; color:black"|
| 1-10 minutes
*Silicon, glass, and polymer substrates
|  
*Film or pattern of all but Type IV
*Stripping: 20-90 minutes
|style="background:WhiteSmoke; color:black"|
*Descum: 5-15 minutes
<b>No metal allowed!</b>
*Surface treatment: Seconds to minutes
*Silicon, glass, and polymer substrates
*Other ashing: Hours, material dependent
*Film or pattern of photoresist/polymer
|
|style="background:WhiteSmoke; color:black"|
*Stripping: 20-90 minutes
*Silicon, III-V, and glass substrates
*Descum: 5-15 minutes
*Film or pattern of all but Type IV
*Surface treatment: Seconds to minutes
|style="background:WhiteSmoke; color:black"|
*Other ashing: Hours, material dependent
<b>No metal allowed!</b>
|
*Silicon, glass, and polymer substrates
*NMP (Remover 1165)
*Film or pattern of photoresist/polymer
*IPA (rinsing agent)
|style="background:WhiteSmoke; color:black"|
|
*Silicon and glass substrates
*NMP (Remover 1165)
*Film or pattern of all but Type IV
*IPA (rinsing agent)
|-
|}
 
<br clear="all" />
 
= Plasma Ashing =
 
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-
|-
 
! scope=row style="text-align: left;" | Substrate batch
|-style="background:silver; color:black"
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|
|
! Photoresist stripping
*100 mm wafer: 1-25
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
*150 mm wafer: 1-25
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
 
|-style="background:whitesmoke; color:black"
!Process pressure
|0.8- 1.2mbar
|0.5- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
 
! scope=row style="text-align: left;" | Substrate materials
|-style="background:silver; color:black"
|
!Process gases
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only on Si carrier)
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*O<sub>2</sub> (400 sccm)
*<span style="color:red">'''No iron (Fe) containing films'''</span>
*N<sub>2</sub> (0-70 sccm)
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*O<sub>2</sub> (70-210 sccm)
*<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span>
*N<sub>2</sub> (0-70 sccm)
*Silicon substrates
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
*III-V substrates (only if clean)
|O<sub>2</sub>
*Glass substrates
|-
*Films, or patterned films, of any material except type IV (Pb, Te)
 
|-style="background:whitesmoke; color:black"
!Process  power
|600-1000W
|150-300W
|150-300W
|1000W or less for heat- sensitive materials
|-
 
|-style="background:silver; color:black"
!Process  time
|5-60 minutes
|1-5 minutes
|a few seconds to a few minutes
|Between 0.5 and 20 hours, depending on the material
|-
 
|-style="background:whitesmoke; color:black"
!Batch size
|1-30
|1-10
|1 wafer at a time
|1 wafer at a time, use a container, e.g Petri dish
|-
|}
|}


<br clear="all" />
=Decommisioned tools=
 
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
 
Typical process parameters:
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W
 
 
A typical descum process in plasma asher 1 or 2:
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min
 
 
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
 
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
 
==Plasma Asher 1==
[[Image:plasmaasher2.JPG|300x300px|thumb|The Plasma Asher 1 is placed in C-1]]
 
The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:
 
*Photoresist stripping
*Descumming
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivation layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
 
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab.
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager] - '''requires login'''
 
===Process Information===
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Descum|Descum]]
 
==Plasma Asher 2==
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]]
 
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
 
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
 
The typical process parameters when operating the equipment:
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar
 
Gas: O2
 
Power: 600 - 1000 watts
 
Time: 5 -30 min., depending on photoresist type and thickness
 
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 18.
 
A Descum process in manual mode: O2:70, N2:70, power:150W, time:10 min
 
Be sure to wait for cooling if the mashine has been used at 1000W right before.
At a load at 2 Fused silica wafers resist removed 0.01-01,5um
 
The other materials have not been tested yet.
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
 
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]
 
<br clear="all" />
 
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
 
Diener Pico Plasma Asher for III-V materials.
 
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
 
<br clear="all" />
-->
 
==Plasma Asher 3: Descum==
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
 
The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.
 
In this machine, only O2 and N2 gases are used for processes.
 
The typical process parameters when operating the equipment:


*Photeresist descum
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
Pressure: 0.2 - 0.8mbar
Gas: O2
Power: 50% - 100%
Time: 1 -10 min., depending on photoresist type and thickness


The other materials have not been tested yet.


The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
 
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
<br clear="all" />
-->
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
<br clear="all" />
==Overview of wet bench 06 and 07==
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-style="background:silver; color:black"
|
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
|-style="background:whitesmoke; color:black"
!General description'''
|Wet stripping of resist
|Lift-off process
|-
|-style="background:silver; color:black"
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-style="background:whitesmoke; color:black"
!Process temperature
|Up to 60°C
|Up to 60°C
|-
|-style="background:silver; color:black"
!Batch size
|
1 - 25 wafers
|
1 - 25 wafers
|-
|-style="background:whitesmoke; color:black"
!Size of substrate
|
*100 mm wafers
*150 mm wafers
|
*100 mm wafers
*150 mm wafers
|-
|-style="background:silver; color:black"
!Allowed materials
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
All metals except Type IV (Pb, Te)
|-
|}

Latest revision as of 10:11, 25 June 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

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Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process pressure 0.8 mbar 0.5-1.5 mbar 0.5-1.5 mbar NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Process temperature Up to ~100°C Up to ~100°C Up to ~100°C Up to ~65°C Up to ~65°C
Process time 1-10 minutes
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only on Si carrier)
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) containing films
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) or Copper (Cu) containing films
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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