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'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Strip click here]'''
{{cc-nanolab}}


= Strip Comparison Table =
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
{| border="2" cellspacing="0" cellpadding="2"


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
[[Category: Equipment|Lithography strip]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]</b>
[[Category: Lithography|Strip]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 2|Plasma Asher 2]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Acetone Strip|Acetone Strip]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b>


|-
__TOC__
!style="background:silver; width:100px; color:black;" align="center"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
All purposes
|style="background:WhiteSmoke; color:black"|
Clean wafers only, no metal
|style="background:WhiteSmoke; color:black"|
III-V materials only
|style="background:WhiteSmoke; color:black"|
Resist strip
|style="background:WhiteSmoke; color:black"|
Resist strip or lift-off


= Strip Comparison Table =
{| class="wikitable"
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Method
!
|style="background:LightGrey; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher03|Plasma Asher 3: Descum]]
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher04|Plasma Asher 4 (Clean)]]
Plasma ashing
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher05|Plasma Asher 5 (Dirty)]]
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip/resistStrip|Resist strip]]
Plasma ashing
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|style="background:WhiteSmoke; color:black"|
Plasma ashing
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
! scope=row style="text-align: left;" | Purpose
|style="background:LightGrey; color:black"|Process gasses
| Resist descum
|style="background:WhiteSmoke; color:black"|
|
*O<sub>2</sub> (0 - 400 sccm)
*Resist stripping
*N<sub>2</sub>
*Resist descum
*CF<sub>4</sub>
*Surface treatment
|style="background:WhiteSmoke; color:black"|
*Other ashing of organic material
*O<sub>2</sub>
|
*N<sub>2</sub>
*Resist stripping
|style="background:WhiteSmoke; color:black"|
*Resist descum
*O<sub>2</sub>
*Surface treatment
|style="background:WhiteSmoke; color:black"|
*Other ashing of organic material
*NA
| Resist stripping
|style="background:WhiteSmoke; color:black"|
| Metal lift-off
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Max. process power
! scope=row style="text-align: left;" | Method
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
*1000 W
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
*1000 W
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
*100%
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Solvent
! scope=row style="text-align: left;" | Process gasses
|style="background:WhiteSmoke; color:black"|
| O<sub>2</sub> (50 sccm)
*NA
|
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*NA
*N<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
|
*NA
*O<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
*N<sub>2</sub> (0-500 sccm)
*Acetone
*CF<sub>4</sub> (0-200 sccm)
|style="background:WhiteSmoke; color:black"|
| NA
*Acetone
| NA
*NMP (Remover 1165)
 
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 - 30 100 mm wafers
*1 - 30 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 - 30 100 mm wafers
*1 - 30 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 small sample
*1 50 mm wafer
*1 100 mm wafer
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
|style="background:WhiteSmoke; color:black"|
*1 - 25 100 mm wafers
 
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
*Metal patterning
|style="background:WhiteSmoke; color:black"|
*No metal!
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*III-V compounds
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
*All metals
|-
|}
 
<br clear="all" />
 
=Plasma Asher 1 =
[[Image:plasmaasher2.JPG|300x300px|thumb|The PlasmaAsher1 is placed in C-1]]
 
The Plasma Asher1( 300 auto load model) can be used for the following process:
 
*Photoresist stripping
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
 
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
 
 
==Process Information==
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO2 etch using Plasma Asher 1]]
 
 
==Overview of typical processes==
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Photoresist stripping
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
|'''Process pressure'''
|0.8- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
! scope=row style="text-align: left;" | Process power
|O<sub>2</sub>, N<sub>2</sub>
| 10-100 W (10-100%)
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
| 150-1000 W
|O<sub>2</sub>
| 150-1000 W
| NA
| NA
|-
|-
|'''Process power'''
! scope=row style="text-align: left;" | Process pressure
|600-1000W
| 0.8 mbar
|150-300W
| 0.5-1.5 mbar
|1000W or less for heat- sensitive materials
| 0.5-1.5 mbar
| NA
| NA
|-
|-
|'''Process time'''
! scope=row style="text-align: left;" | Process solvent
|5-60min, depending of photoresist thickness
| NA
|a few seconds to a few minutes
| NA
|Between 0.5 and 20 hours, depending on the material
| NA
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
|'''Batch size'''
! scope=row style="text-align: left;" | Process temperature
|1-10 wafers at a time
| Up to ~100°C
|1 wafer at a time
| Up to ~100°C
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
| Up to ~100°C
| Up to ~65°C
| Up to ~65°C
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Process time
|2"-6"
| 1-10 minutes
|2"-6"
|  
|2"-6"
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|  
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
|'''Allowed materials'''
! scope=row style="text-align: left;" | Substrate batch
|All
|
|All
*Chips: several
|All
*50 mm wafer: several
 
*100 mm wafer: 1
|-
|
|}
*Chips: several
 
*50 mm wafer: several
<br clear="all" />
*100 mm wafer: 1-25
 
*150 mm wafer: 1-25
A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
*200 mm wafer: 1-25
 
|
=Plasma Asher 2 =
*Chips: several
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in E-5]]
*50 mm wafer: several
 
*100 mm wafer: 1-25
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
*150 mm wafer: 1-25
 
*200 mm wafer: 1-25
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
 
The typical process parameters when operating the equipment:
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar
 
Gas: O2
 
Power: 600 - 1000 watts
 
Time: 5 -30 min., depending on photoresist type and thickness
 
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.
 
A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
 
The other materials have not been tested yet.
 
=III-V Plasma Asher =
 
 
=Acetone Strip=
 
[[Image:Lift-off wet bench.JPG|300x300px|thumb|Acetone strip bench in D-3]]
 
{| border="1" cellspacing="0" cellpadding="4" align="right"
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|}
 
This acetone strip is only for wafers without metal and SU-8.
 
There are two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
 
 
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .
 
<br clear="all" />
 
=Overview of acetone benches=
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Acetone strip
! Lift-off
|-
|'''General description'''
|
|
wet stripping of resist
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|
|
lift-off process
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
|'''Chemical solution'''
! scope=row style="text-align: left;" | Substrate materials
|CH<sub>3</sub>COCH<sub>3</sub>
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|'''Process temperature'''
|20 <sup>o</sup>C
 
|20 <sup>o</sup>C
 
|-
 
|'''Batch size'''
|
|
1-25 wafers at a time
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
1-25 wafer at a time
*<span style="color:red">'''No metals'''</span><br>
|-
*<span style="color:red">'''No metal oxides'''</span><br>
|'''Size of substrate'''
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
|
4" wafers
*Silicon substrates
*III-V substrates (only on Si carrier)
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
4" wafers
*<span style="color:red">'''No iron (Fe) containing films'''</span>
|-
*Silicon substrates
|'''Allowed materials'''
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*Silicon
*<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span>
*Silicon Oxide
*Silicon substrates
*Silicon Nitride
*III-V substrates (only if clean)
*Silicon Oxynitride
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
 
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
 


|
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
*All metals


|-
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
|}
<br clear="all" />

Latest revision as of 10:11, 25 June 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process pressure 0.8 mbar 0.5-1.5 mbar 0.5-1.5 mbar NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Process temperature Up to ~100°C Up to ~100°C Up to ~100°C Up to ~65°C Up to ~65°C
Process time 1-10 minutes
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only on Si carrier)
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) containing films
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) or Copper (Cu) containing films
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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