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= Strip Comparison Table =
{{cc-nanolab}}
{| border="2" cellspacing="0" cellpadding="2"


!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Strip click here]'''
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 1|Plasma Asher 1]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#III-V Plasma Asher|III-V Plasma Asher]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Rough Acetone Strip|Rough Acetone Strip]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Fine Acetone Strip|Fine Acetone Strip]]</b>


|-
[[Category: Equipment|Lithography strip]]
!style="background:silver; width:100px; color:black;" align="center"|Purpose
[[Category: Lithography|Strip]]
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*All purposes
|style="background:WhiteSmoke; color:black"|
*clean wafers only, no metal
|style="background:WhiteSmoke; color:black"|
*III-V materials only
|
|


|-
__TOC__
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Performance
|style="background:LightGrey; color:black"|Minimum feature size
|style="background:WhiteSmoke; color:black"|
*1.25µm down to 1.0µm
|style="background:WhiteSmoke; color:black"|
*1.25µm
|style="background:WhiteSmoke; color:black"|
|
|


= Strip Comparison Table =
{| class="wikitable"
|-
|-
|style="background:LightGrey; color:black"|Exposure light/filters/spectrum
!
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher03|Plasma Asher 3: Descum]]
* 350W Hg-lamp, 365nm filter, 303nm filter optional
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher04|Plasma Asher 4 (Clean)]]
* intensity in Constant Intensity(CI) mode 7mJ/cm2
! [[Specific_Process_Knowledge/Lithography/Strip/plasmaAsher05|Plasma Asher 5 (Dirty)]]
|style="background:WhiteSmoke; color:black"|
! [[Specific_Process_Knowledge/Lithography/Strip/resistStrip|Resist strip]]
* 350W Hg-lamp, SU8 filter, 365nm filter optional
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
* intensity in Constant Intensity(CI) mode 7mJ/cm2
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|
 
|-
|-
|style="background:LightGrey; color:black"|Exposure mode
! scope=row style="text-align: left;" | Purpose
|style="background:WhiteSmoke; color:black"|
| Resist descum
*proximity, soft, hard, vacuum contact
|style="background:WhiteSmoke; color:black"|
*proximity, soft, hard, vacuum contact
*proximity, soft, hard, vacuum contact
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|
|
 
*Resist stripping
|-
*Resist descum
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range
*Surface treatment
|style="background:LightGrey; color:black"|Positive Process
*Other ashing of organic material
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|style="background:WhiteSmoke; color:black"|
*
|
|
 
*Resist stripping
*Resist descum
*Surface treatment
*Other ashing of organic material
| Resist stripping
| Metal lift-off
|-
|-
|style="background:LightGrey; color:black"|Negative Process
! scope=row style="text-align: left;" | Method
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
*
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
*
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
*
|style="background:WhiteSmoke; color:black"|
*
|
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Process gasses
|style="background:LightGrey; color:black"|Batch size
| O<sub>2</sub> (50 sccm)
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> small samples
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>25</nowiki> 150 mm wafers with automatic handling
|style="background:WhiteSmoke; color:black"|
*<nowiki>1</nowiki> small samples
*<nowiki>1</nowiki> 50 mm wafers
*<nowiki>1</nowiki> 100 mm wafers
*<nowiki>1</nowiki> 150 mm wafers
|style="background:WhiteSmoke; color:black"|
*
|
|
 
*O<sub>2</sub> (0-500 sccm)
|-
*N<sub>2</sub> (0-500 sccm)
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*Si and silicon oxide, silicon nitride
*Quartz, pyrex
|style="background:WhiteSmoke; color:black"|
*III-V compounds
|style="background:WhiteSmoke; color:black"|
*
|
|
|-
*O<sub>2</sub> (0-500 sccm)
|}
*N<sub>2</sub> (0-500 sccm)
 
*CF<sub>4</sub> (0-200 sccm)
<br clear="all" />
| NA
 
| NA
=Plasma Asher 1 =
[[Image:plasmaasher2.JPG|322 × 324px|thumb|The PlasmaAsher1 is placed in Cleanroom 3.]]
 
The Plasma Asher1( 300 auto load model) can be used for the following process:
 
*Photoresist stripping
*Surface cleaning after storage
*Surface cleaning after processes using oil pump or diffusion pump vacuum
*Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
*Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
*Removal of organic passivating layers and masks
*Etching of glass and ceramic
*Etching of SiO<math>_2</math>, Si<math>_3</math>N<math>_4</math>, Si
*Removal of polyimide layers
 
The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Danchip.
 
 
==Overview of typical processes==
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Photoresist stripping
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-  
|'''Process pressure'''
|0.8- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
|-
|'''Process gases'''
! scope=row style="text-align: left;" | Process power
|O<sub>2</sub>, N<sub>2</sub>
| 10-100 W (10-100%)
|O<math>_2</math>, CF<math>_4</math>, N<math>_2</math> or their mixtures
| 150-1000 W
|O<sub>2</sub>
| 150-1000 W
| NA
| NA
|-
|-
|'''Process power'''
! scope=row style="text-align: left;" | Process pressure
|600-1000W
| 0.8 mbar
|150-300W
| 0.5-1.5 mbar
|1000W or less for heat- sensitive materials
| 0.5-1.5 mbar
| NA
| NA
|-
|-
|'''Process time'''
! scope=row style="text-align: left;" | Process solvent
|5-60min, depending of photoresist thickness
| NA
|a few seconds to a few minutes
| NA
|Between 0.5 and 20 hours, depending on the material
| NA
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
|'''Batch size'''
! scope=row style="text-align: left;" | Process temperature
|1-10 wafers at a time
| Up to ~100°C
|1 wafer at a time
| Up to ~100°C
|1 wafer at a time, use a container: Petri dish, evaporating dish weighing dish, beaker, etc.
| Up to ~100°C
| Up to ~65°C
| Up to ~65°C
|-
|-
|'''Size of substrate'''
! scope=row style="text-align: left;" | Process time
|2"-6"
| 1-10 minutes
|2"-6"
|  
|2"-6"
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|  
*Stripping: 20-90 minutes
*Descum: 5-15 minutes
*Surface treatment: Seconds to minutes
*Other ashing: Hours, material dependent
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|
*NMP (Remover 1165)
*IPA (rinsing agent)
|-
|-
|'''Allowed materials'''
! scope=row style="text-align: left;" | Substrate batch
|All
|
|All
*Chips: several
|All
*50 mm wafer: several
 
*100 mm wafer: 1
|-
|
|}
*Chips: several
 
*50 mm wafer: several
<br clear="all" />
*100 mm wafer: 1-25
 
*150 mm wafer: 1-25
 
*200 mm wafer: 1-25
 
|
 
*Chips: several
A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210ml O<math>_2</math>/min or mixture of 210ml O<math>_2</math>/min and 70ml N<math>_2</math>/min, power 1000W.
*50 mm wafer: several
 
*100 mm wafer: 1-25
=Plasma Asher 2 =
*150 mm wafer: 1-25
[[Image:Plasma_Asher_6inch.jpg|300x300px|thumb|Plasma asher for removing AZ resist on 6" wafers: positioned in cleanroom ? (class 10 yellow room)]]
*200 mm wafer: 1-25
 
The Plasma Asher 2 is the same as Plasma Asher 1 but has another loading system which is more convenient for batch loading of 6inch substrates.
 
In this machine, only O2 and N2 gases are used for processes (in PlasmaAsher1, CF4 is used as well).
 
The typical process parameters when operating the equipment:
*Photeresist stripping
Pressure: 0.8 - 1.0 mbar
 
Gas: O2
 
Power: 600 - 1000 watts
 
Time: 5 -30 min., depending on photoresist type and thickness
 
A typical process time for stripping of 1.5 um AZ5214e resist is 25 min for 6 wafers load in a boat, recipe 1.
 
A Descum process in manuel mode:O2:70, N2:70, power:150W, time:10min Be sure to wait for cooling if the mashine has been used at 1000W right before.
At a load at 2 Fused silicawafers resist removed 0.01-01,5um
 
The other materials have not been tested yet.
 
==Rough Acetone Strip==
{| border="1" cellspacing="0" cellpadding="4" align="right"
|[[Image:Acetone_rough.jpg|150x150px|thumb|Acetone bath "rough" for removing most of the resist]]
|[[Image:Acetone_fine.jpg|150x150px|thumb|Acetone bath "fine" for removing the rest of the resist incl. ultrasound]]
|-
|}
 
This acetone strip is only for wafers without metal and SU-8!
 
There is two acetone bath: one rough for stripping the most of the resist from the surface and one fine with a ultrasound for cleaning the  resists remains.
 
 
'''Here are the main rules for acetone strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 2-5 min, this time is depending how much resist you have on the surface.
*After the rough strip place your wafers directly in the final bath, switch on for the ultra sound  and strip them for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping .
 
<br clear="all" />
 
=Lift-off wet bench=
[[Image:Acetone_lift-off.jpg|300x300px|thumb|Acetone lift-off: positioned in cleanroom 3]]
This bench is only for wafers with metal!
 
Here are the main rules for lift-off bench use:
*Place the wafers in a dedicated wafer holder.
*Put the holder in the acetone and start the ultrasound. The strip off time is depending of resist thickness.
*Rinse your wafers for 4-5 min. in running water after stripping.
 
Find more info about the lift-off process here: [[Specific Process Knowledge/Photolithography/AZ5214E standard resist - reverse process]]
<br clear="all" />
 
=Overview of acetone benches=
 
{| border="2" cellspacing="0" cellpadding="4" align="left"
!
! Acetone strip
! Lift-off
|-
|'''General description'''
|
|
wet stripping of resist
*100 mm wafer: 1-25
*150 mm wafer: 1-25
|
|
lift-off process
*100 mm wafer: 1-25
|-
*150 mm wafer: 1-25
|'''Chemical solution'''
|CH<sub>3</sub>COCH<sub>3</sub>
|CH<sub>3</sub>COCH<sub>3</sub>
|-
|-
|'''Process temperature'''
! scope=row style="text-align: left;" | Substrate materials
|20 <sup>o</sup>C
 
|20 <sup>o</sup>C
 
|-
 
|'''Batch size'''
|
|
1-25 wafers at a time
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
1-25 wafer at a time
*<span style="color:red">'''No metals'''</span><br>
|-
*<span style="color:red">'''No metal oxides'''</span><br>
|'''Size of substrate'''
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
|
4" wafers
*Silicon substrates
*III-V substrates (only on Si carrier)
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
4" wafers
*<span style="color:red">'''No iron (Fe) containing films'''</span>
|-
*Silicon substrates
|'''Allowed materials'''
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
|
*Silicon
*<span style="color:red">'''No iron (Fe) or Copper (Cu) containing films'''</span>
*Silicon Oxide
*Silicon substrates
*Silicon Nitride
*III-V substrates (only if clean)
*Silicon Oxynitride
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
 
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
 
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
 


|
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
*All metals


|-
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
|}
<br clear="all" />

Latest revision as of 10:11, 25 June 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Strip Comparison Table

Plasma Asher 3: Descum Plasma Asher 4 (Clean) Plasma Asher 5 (Dirty) Resist strip Lift-off
Purpose Resist descum
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
  • Resist stripping
  • Resist descum
  • Surface treatment
  • Other ashing of organic material
 Resist stripping Metal lift-off
Method Plasma ashing Plasma ashing Plasma ashing Solvent & ultrasonication Solvent & ultrasonication
Process gasses O2 (50 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • O2 (0-500 sccm)
  • N2 (0-500 sccm)
  • CF4 (0-200 sccm)
 NA NA
Process power 10-100 W (10-100%) 150-1000 W 150-1000 W NA NA
Process pressure 0.8 mbar 0.5-1.5 mbar 0.5-1.5 mbar NA NA
Process solvent NA NA NA
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Process temperature Up to ~100°C Up to ~100°C Up to ~100°C Up to ~65°C Up to ~65°C
Process time 1-10 minutes
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • Stripping: 20-90 minutes
  • Descum: 5-15 minutes
  • Surface treatment: Seconds to minutes
  • Other ashing: Hours, material dependent
  • NMP (Remover 1165)
  • IPA (rinsing agent)
  • NMP (Remover 1165)
  • IPA (rinsing agent)
Substrate batch
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • Chips: several
  • 50 mm wafer: several
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 200 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
  • 100 mm wafer: 1-25
  • 150 mm wafer: 1-25
Substrate materials
  • No polymer substrates
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No metals
  • No metal oxides
  • No III-V materials
  • Silicon substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of resists/polymers
  • Silicon substrates
  • III-V substrates (only on Si carrier)
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) containing films
  • Silicon substrates
  • III-V substrates
  • Glass substrates
  • Polymer substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • No iron (Fe) or Copper (Cu) containing films
  • Silicon substrates
  • III-V substrates (only if clean)
  • Glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.


Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

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