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{{:Specific Process Knowledge/Lithography/authors_generic}}
{{cc-nanolab}}


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Development click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/Development click here]'''
Line 6: Line 6:
[[Category: Lithography|Development]]
[[Category: Lithography|Development]]


==Development Comparison Table==
__TOC__
 
{| border="2" cellspacing="0" cellpadding="2"
 
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer:_SU8|Developer: SU8]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer: E-beam|Developer: E-beam]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual|Developer: TMAH Manual]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer: TMAH UV-lithography]]</b>
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Development/DUV_developer#Developer:_TMAH_Stepper|Developer: TMAH Stepper]]</b>


=Development Comparison Table=
{| class="wikitable"
|-
!
! [[Specific Process Knowledge/Lithography/Development/beaker_developer|Manual beaker development]]
! [[Specific_Process_Knowledge/Lithography/Development/SU8_developer|Developer: SU8 (Wet bench)]]
! [[Specific_Process_Knowledge/Lithography/Development/manualEbeam_developer|Developer: E-beam 02]]
! [[Specific_Process_Knowledge/Lithography/Development/manualTMAH_developer|Developer: TMAH Manual 02]]
! [[Specific_Process_Knowledge/Lithography/Development/UV_developer|Developer: TMAH UV-lithography]]
! [[Specific_Process_Knowledge/Lithography/Development/DUV_developer|Developer: TMAH Stepper]]
|-
|-
!style="background:silver; color:black" align="center" width="60"|Purpose  
! scope=row style="text-align: left;" | Purpose  
|style="background:LightGrey; color:black"|
|
Fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools


 
<span style="color:red">Requires individual risk assessment for TMAH development!</span>
|style="background:WhiteSmoke; color:black"|
|
Development of:
Development of:
*SU-8
*SU-8
|style="background:WhiteSmoke; color:black"|
|
Development of:
Development of:
*ZEP 520A
*ZEP 520A
*AR-P 6200.xx (CSAR)
*AR-P 6200.xx (CSAR)
|style="background:WhiteSmoke; color:black"|
|  
Development of:
Development of:
*AZ nLOF
*AZ nLOF
Line 36: Line 38:
*AZ 4562
*AZ 4562
*DUV resists
*DUV resists
|style="background:WhiteSmoke; color:black"|
|  
Development of:
Development of:
*AZ nLOF
*AZ nLOF
Line 44: Line 46:
*DUV resists
*DUV resists
Post-exposure baking
Post-exposure baking
|style="background:WhiteSmoke; color:black"|
|
Development of:
Development of:
*DUV resists
*DUV resists
Post-exposure baking
Post-exposure baking
|-
|-
!style="background:silver; color:black" align="center" width="60"|Developer  
! scope=row style="text-align: left;" | Developer
|style="background:LightGrey; color:black"|
| Process dependent
 
| mr-Dev 600 (PGMEA)
|style="background:WhiteSmoke; color:black"|
|  
mr-Dev 600 (PGMEA)
|style="background:WhiteSmoke; color:black"|
*ZED N-50
*ZED N-50
*AR-600-546
*AR 600-50
|style="background:WhiteSmoke; color:black"|
| AZ 726 MIF (2.38% TMAH in water)
AZ 726 MIF (2.38% TMAH in water)
| AZ 726 MIF (2.38% TMAH in water)
|style="background:WhiteSmoke; color:black"|
| AZ 726 MIF (2.38% TMAH in water)
AZ 726 MIF (2.38% TMAH in water)
|style="background:WhiteSmoke; color:black"|
AZ 726 MIF (2.38% TMAH in water)
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
! scope=row style="text-align: left;" | Method
|style="background:LightGrey; color:black"|Development
| Submersion
|style="background:WhiteSmoke; color:black"|
| Submersion
Submersion
| Puddle
|style="background:WhiteSmoke; color:black"|
| Puddle
Spray/Puddle
| Puddle
|style="background:WhiteSmoke; color:black"|
| Puddle
Spray/Puddle
|style="background:WhiteSmoke; color:black"|
Puddle
|style="background:WhiteSmoke; color:black"|
Puddle
|-
|-
|style="background:LightGrey; color:black"|Handling
! scope=row style="text-align: left;" | Handling
|style="background:WhiteSmoke; color:black"|
|
Single wafer carrier
Manual handling in beakers
|style="background:WhiteSmoke; color:black"|
*Chip bucket
*Vacuum chuck for 100 mm & 150 mm substrates
*Single wafer carrier
*Chip chuck for chips & 2" substrates
*Carrier for up to 5 wafers
|style="background:WhiteSmoke; color:black"|
|
*Vacuum chuck for 100 mm & 150 mm substrates
*Chip bucket
*Chip chuck for chips & 2" substrates
*Single wafer carrier
|style="background:WhiteSmoke; color:black"|
*Carrier for up to 6 wafers
Vacuum chuck
|
|style="background:WhiteSmoke; color:black"|
*Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates
Vacuum chuck
*Chip chuck for chips & 50 mm substrates
|
*Vacuum-free edge-grip chuck for 100 mm & 150 mm substrates
*Chip chuck for chips & 50 mm substrates
| Vacuum chuck
| Vacuum chuck
|-
|-
 
! scope=row style="text-align: left;" | Process temperature
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
| Room temperature
|style="background:LightGrey; color:black"|Temperature
| Room temperature
 
| Room temperature
|style="background:WhiteSmoke; color:black"|
| Room temperature
Room temperature
| Room temperature
|style="background:WhiteSmoke; color:black"|
| Room temperature
Room temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|-
|style="background:LightGrey; color:black"|Agitation
! scope=row style="text-align: left;" | Process agitation
 
| No agitation allowed
|style="background:WhiteSmoke; color:black"|
| Magnetic stirrer
Magnetic stirrer
| Rotation
|style="background:WhiteSmoke; color:black"|
| Rotation
Rotation
| Rotation
|style="background:WhiteSmoke; color:black"|
| Rotation
Rotation
|style="background:WhiteSmoke; color:black"|
Rotation
|style="background:WhiteSmoke; color:black"|
Rotation
|-
|-
|style="background:LightGrey; color:black"|Rinse
! scope=row style="text-align: left;" | Process rinse
 
| Process dependent
|style="background:WhiteSmoke; color:black"|
| IPA
IPA
| IPA
|style="background:WhiteSmoke; color:black"|
| DI water
IPA
| DI water
|style="background:WhiteSmoke; color:black"|
| DI water
DI water
|style="background:WhiteSmoke; color:black"|
DI water
|style="background:WhiteSmoke; color:black"|
DI water
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate size
|style="background:LightGrey; color:black"|Substrate size
|
 
* Chips
|style="background:WhiteSmoke; color:black"|
* 50 mm wafers
*100 mm wafers
* 100 mm wafers
|style="background:WhiteSmoke; color:black"|
* 150 mm wafers
|
* Chips
* 50 mm wafers
* 100 mm wafers
* 150 mm wafers
* 200 mm wafers
|
* Chips (5mm to 2")
* Chips (5mm to 2")
* 50 mm wafers
* 50 mm wafers
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
* 150 mm wafers
|style="background:WhiteSmoke; color:black"|
* 200 mm wafers
* Chips (5mm to 2")
|
* Chips (5mm to 50 mm)
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
* 150 mm wafers
|style="background:WhiteSmoke; color:black"|
|
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
* 150 mm wafers
* 200 mm wafers (may require tool change)
* 200 mm wafers (may require tool change)
|style="background:WhiteSmoke; color:black"|
|
* 100 mm wafers
* 100 mm wafers
* 150 mm wafers
* 150 mm wafers
* 200 mm wafers (may require tool change)
* 200 mm wafers (may require tool change)
|-
|-
|style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Allowed materials
 
| All cleanroom approved materials
|style="background:WhiteSmoke; color:black"|
|
*Silicon and glass substrates
*Silicon and glass substrates
*Film or pattern of all but Type IV
*Film or pattern of all but Type IV
|style="background:WhiteSmoke; color:black"|
| All cleanroom approved materials
All cleanroom approved materials
|
|style="background:WhiteSmoke; color:black"|
*All cleanroom approved materials
*All cleanroom approved materials
*Film or pattern of all types
*Film or pattern of all types
|style="background:WhiteSmoke; color:black"|
|
*Silicon and glass substrates
*Silicon and glass substrates
*Film or pattern of all but Type IV
*Films, or patterned films, of any material except type IV (Pb, Te)
|style="background:WhiteSmoke; color:black"|
|
*Silicon, III-V, and glass substrates
*Silicon, III-V, and glass substrates
*Film or pattern of all but Type IV
*Films, or patterned films, of any material except type IV (Pb, Te)
|-
|-
|style="background:LightGrey; color:black"|Batch
! scope=row style="text-align: left;" | Batch size
 
| 1 - 5
|style="background:WhiteSmoke; color:black" align="center"|
| 1 - 6
1 - 6
| 1
|style="background:WhiteSmoke; color:black" align="center"|
| 1
1
| 1 - 25
|style="background:WhiteSmoke; color:black" align="center"|
| 1 - 25
1
|style="background:WhiteSmoke; color:black" align="center"|
1 - 25  
|style="background:WhiteSmoke; color:black" align="center"|
1 - 25
|-
|}
|}
<br clear="all" />
<br clear="all" />


<!-- TARAN 2020-03-05
<!--
==Developer-1 and Developer-2==
! [[Specific Process Knowledge/Lithography/Development/beaker_developer|Manual beaker development]]
[[Image:Developer1&2.jpg|300x300px|thumb|right|Developer-1 (right) and Developer-2 (left) are located in C-1]]
! [[Specific_Process_Knowledge/Lithography/Development#Developer: SU8 (Wet Bench)|Developer: SU8 (Wet bench)]]
 
! [[Specific_Process_Knowledge/Lithography/Development#Developer: E-beam 02|Developer: E-beam 02]]
'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer-1_and_Developer-2 click here]'''
! [[Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual 02|Developer: TMAH Manual 02]]
 
! [[Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography|Developer: TMAH UV-lithography]]
===<span style="color:red">This equipment was decommissioned January 2017!</span>===
! [[Specific_Process_Knowledge/Lithography/Development/DUV_developer#Developer:_TMAH_Stepper|Developer: TMAH Stepper]]
 
Developer-1 and Developer-2 are manual developer baths for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the user prior to development start, and the wafer cassette is agitated manually by the user during development. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.
 
'''The user APV, and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=62 Developer-1] [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=63 Developer-2]'''
 
===Process information===
 
'''Standard development time using vigorous agitation:'''
 
'''AZ 5214E:'''
*1.5µm resist: 60 sec
*2.2µm resist: 70 sec
*4.2µm resist: 3 min
'''AZ 4562:'''
*10µm resist: 5 min
 
'''Standard development procedure:'''
 
*Before using one of developer baths, please check the "Litho4_Dev-7up-KOH" logbook to find out when they were last used. A fresh bath can be reused without problems.
*The main rule is a developer made yesterday must be changed.
*During development, agitate the substrates by moving the carrier up and down.
*Rinse substrates with water for 4-5 min. after development.
*Spin-dry substrates or dry with nitrogen gun after rinsing.
 
====Procedure for making a new developer====
 
1. Switch off the heater, and dump the old developer.
 
2. 800ml "Developer AZ 351B" is mixed with 4000ml water in a special container in the fume hood.
 
3. Fill the bath with the developer mixture, and heat it to 22°C before use.
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ 5214E
*AZ 4562
|-
!style="background:silver; color:black;" align="center" width="60"|Developer  
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ 351B diluted 1:5 in water
 
(NaOH and sodium borate salt)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Cassette
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
22°C
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Manual
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon, glass, and polymer substrates
 
Film or pattern of all types
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1-8
|-
|}
 
<br clear="all" />
-->
-->
<!--
{{:Specific Process Knowledge/Lithography/Development/beaker_developer}}


<!-- TARAN 2020-03-05
{{:Specific Process Knowledge/Lithography/Development/SU8_developer}}
==Developer-6inch==


[[image:6inchDeveloper.jpg|300x300px|right|thumb|The Developer: 6inch bench is located in E-4]]
{{:Specific Process Knowledge/Lithography/Development/manualEbeam_developer}}


'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Developers#Developer-6inch click here]'''
{{:Specific Process Knowledge/Lithography/Development/manualTMAH_developer}}


===<span style="color:red">This equipment will be decommissioned December 2019!</span>===
{{:Specific Process Knowledge/Lithography/Development/UV_developer}}


The Developer: 6inch bench is an automated developer bath for submersion development of AZ 5214E and AZ 4562 resists in AZ 351B developer. The developer is mixed 1:5 in water by the equipment prior to development start. The developer is circulated during development, and the wafer cassette may be agitated by a mechanical elevator. The development time is controlled manually by the user. After development, the substrates are rinsed with water in the bench.
{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}
 
'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=189 LabManager]'''
 
===Process information===
 
'''Standard development time:'''
 
'''AZ 5214E:'''
*1.5µm resist: 60 sec
*2.2µm resist: 70 sec
*4.2µm resist: 3 min
'''AZ 4562:'''
*10µm resist: 5 min
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ 5214E
*AZ 4562
|-
!style="background:silver; color:black;" align="center" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ 351B diluted 1:5 in water
 
(NaOH and sodium borate salt)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Cassette
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
22°C
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Circulation and mechanical
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon, glass, and polymer substrates
 
Film or pattern of all types
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1-25
|-
|}
 
<br clear="all" />
-->
-->


==Developer: SU8==
=Decommisioned tools=
[[Image:SU-8developer.jpg|300x300px|right|thumb|The SU8-Developer bench is located in C-1]]
<span style="color:red">Developer 1 & 2 were decommissioned 2017-01.</span>
 
'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#SU8-Developer click here]'''
 
The SU8-Developer bench is a manually operated chemical bench for submersion development of SU-8 photoresist in PGMEA (supplied in the cleanroom as mr-Dev 600). The development process is in two stages; one bath (FIRST) to dissolve the bulk of the resist, and a second, cleaner bath (FINAL) to finish the development. The development time is controlled manually by the user. After development, the substrates are rinsed with IPA and dried in the bench.
 
'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=154 LabManager]'''
 
===Process information===
Several aspects of the outcome of SU-8 processing are affected by the development process. The lithographic resolution is affected by the time between PEB (post-exposure bake) and development, as the cross-linking process continues in the interface between exposed and unexposed regions even at room temperature. Cracks in the structures is affected by two things; the development time, and how much has previously been developed in the developer bath. Cracking is worse with longer development time, and worst in a new developer bath. The effect of the developer use quickly saturates (5-10 wafers). Finally, the stability of fine structures (high aspect ratio) is affected by the rinse after development, as the lower surface tension of IPA compared to PGMEA reduces pattern collapse during drying.
 
Development time is strongly dependent on the SU-8 thickness.
*Minimum development time: 1 min per 20µm in FIRST
Suggestions:
*2-5µm: 2 min. in FIRST; 2 min. in FINAL
*40µm: 5 min. in FIRST; 5 min. in FINAL (however, 3 min. in FIRST and 2 min. in FINAL is sufficient)
*180-250µm: 15 min. in FIRST; 15 min. in FINAL
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of:
*SU-8
|-
!style="background:silver; color:black;" align="center" width="60"|Developer  
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
mr-Dev 600
 
(PGMEA)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black"|
Submersion
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black"|
Single wafer holder
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black"|
Magnetic stirrer
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black"|
IPA
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
*100 mm wafers
*150 mm wafer is possible if the developer liquid level is high enough
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon and glass substrates
*Film, or pattern, of all materials except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
1-6
|-
|}
<br clear="all" />
 
==Developer: E-beam==
[[Image:IMG 2464.JPG|300×300px|right|thumb|Developer: E-beam is located in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer:_E-beam click here]'''
 
Developer: E-beam is a manually operated, single substrate or chip spray-puddle developer. It uses the N50 or AR 600-546 developers and IPA for rinsing. The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, IPA rinse, and drying is performed automatically by the equipment.
 
The machine is setup to agitate and be stationary to enhance the development uniformity - this is a ongoing process.
 
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]''' (for Developer: TMAH Manual, but it is the same model)
 
'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager]'''
 
===Process information===
 
All recipes are single puddle.
N50 and 546 denotes the developer used (546 is short for AR 600- 546).
The first step is pressurizing the canister so nothing will happen visually.
Please watch if the developer and rinsing starts. If not try to restart the machine by pressing the EMO and turning it on again.
The spray is 8-10 s and will start the development process hence the short recipes (10s and 30s.) have been adjusted according to this.
 
'''Process recipes'''
*546 10s: 10s. Development Rinse and dry.
*546 30s: 60s. Development Rinse and dry.
*546 60s: 60s. Development Rinse and dry.
*546 180s: 180s. Development Rinse and dry.
*N50 10s: 10s. Development Rinse and dry.
*N50 30s: 30s. Development Rinse and dry.
*N50 60s: 60s. Development Rinse and dry.
*N50 90s: 90s. Development Rinse and dry.
*N50 120s: 120s. Development Rinse and dry.
*N50 180s: 180s. Development Rinse and dry.
*N50 300s: 300s. Development Rinse and dry.
*N50 180s6": Test for changing the agitation for 6" uniformity 180s. Development Rinse and dry.
*Testdev: The time can be modified 60s. Development Rinse and dry on AR 600-546.
*Rinse: Rinse and dry.
 
'''Utility recipes'''
*UTIL-DR: Dome rinse.
*UTIL-BE: Bottle empty. Nanolab use only.
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
|-
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of:
*CSAR
*ZEP520A
 
|-
!style="background:silver; color:black;" align="center" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
*AR 600 - 546 (developer X AR 600-54/6) used for CSAR 6200 series resists
*ZED N-50 used for Zep520A resists
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black"|
Spray/Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black"|
*Vacuum chuck for 100 mm or 150 mm wafers
*Chip chick for chips and 2" wafers
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black"|
Rotational agitation at 15 rpm
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black"|
IPA
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
* Chips (6-60 mm)
* 2" wafers
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*All cleanroom approved materials
*Film, or pattern, of all materials except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
1
|-
|}
 
<br clear="all" />


==Developer: TMAH Manual==
[[Specific Process Knowledge/Lithography/Development/1and2_developer|Information about decommissioned tool can be found here.]]
[[Image:IMG 2464.JPG|300×300px|right|thumb|Developer: TMAH Manual is located in E-4]]


'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer:_TMAH_Manual click here]'''


Developer: TMAH Manual is a manually operated, single substrate or chip spray-puddle developer. It uses the TMAH based AZ 726 MIF developer (2.38 % TMAH in  water with a small amount of wetting agent). The substrates or chips are loaded manually one by one into the developer. Developer dispense, puddle time, water rinse, and drying is performed automatically by the equipment.
<span style="color:red">Developer 6 inch was decommissioned 2019-12.</span>


The spray nozzle makes it difficult to build up a perfect puddle on 4" or 6" substrates which affects the effectiveness and uniformity of the development. Pre-wetting during dispense or agitation during development may give better results.
[[Specific Process Knowledge/Lithography/Development/6inch_developer|Information about decommissioned tool can be found here.]]
 
'''[https://www.youtube.com/watch?v=btinNzYnLnY Training video]'''
 
'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=324 LabManager]'''
 
===Process information===
 
'''Process recipes'''
*DP 2x60s: Double puddle, 2 times 60s. Rinse and dry.
*MP 4x60s: Multiple puddle, 4 times 60s. Rinse and dry.
*SP 120s: Single puddle, 120s. Rinse and dry.
*SP 15s: Single puddle, 15s. Rinse and dry.
*SP 30s: Single puddle, 30s. Rinse and dry.
*SP 60s: Single puddle, 60s. Rinse and dry.
 
'''Utility recipes'''
*UTIL-DR: Dome rinse.
*UTIL-BE: Bottle empty. Nanolab use only.
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
Development of:
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
|-
!style="background:silver; color:black;" align="center" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
AZ 726 MIF
 
(2.38% TMAH in water)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black"|
Spray/Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black"|
*Edge handling chuck for 100 mm and 150 mm wafers
*Vacuum chuck for 100 mm and 150 mm wafers
*Chip chuck for chips and 2" wafers
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black"|
none
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
* Chips (6-60 mm)
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*All cleanroom approved materials
*Film, or pattern, of all materials except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black"|
1
|-
|}
<br clear="all" />
 
==Developer TMAH UV-lithography==
 
[[Image:SUSS DEV.JPG|300x300px|right|thumb|Developer: TMAH UV-lithography is located in E-4]]
 
'''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Development#Developer_TMAH_UV-lithography click here]'''
 
Developer TMAH UV-lithography was released Q4 2014.
 
'''[https://www.youtube.com/watch?v=fs9DRH0Eo3k Training video]'''
 
'''The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=329 LabManager]'''
 
===[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing|Process Information]]===
*[[Specific Process Knowledge/Lithography/Development/Developer_TMAH_UV-lithography_processing#General_Process_Information|General process information]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography_processing#Process recommendations|Process recommendations]]
*[[Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing#Standard Processes|Standard processes]]
 
=== Equipment performance and process related parameters ===
 
{| border="2" cellspacing="0" cellpadding="2"
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
Development of
*AZ nLOF
*AZ MiR 701
*AZ 5214E
*AZ 4562
*DUV resists
|-
!style="background:silver; color:black;" align="center" width="60"|Developer
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" align="center"|
AZ 726 MIF
 
(2.38% TMAH in water)
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Method
|style="background:LightGrey; color:black"|Development
|style="background:WhiteSmoke; color:black" align="center"|
Puddle
|-
|style="background:LightGrey; color:black"|Handling
|style="background:WhiteSmoke; color:black" align="center"|
Vacuum chuck
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
|style="background:LightGrey; color:black"|Temperature
|style="background:WhiteSmoke; color:black" align="center"|
Room temperature
|-
|style="background:LightGrey; color:black"|Agitation
|style="background:WhiteSmoke; color:black" align="center"|
Rotation
|-
|style="background:LightGrey; color:black"|Rinse
|style="background:WhiteSmoke; color:black" align="center"|
DI water
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" align="center"|
* 100 mm wafers
* 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" align="center"|
Silicon and glass substrates
 
Film or pattern of all except Type IV
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" align="center"|
1-25
|-
|}
<br clear="all" />
 
{{:Specific Process Knowledge/Lithography/Development/DUV_developer}}

Latest revision as of 12:25, 13 January 2026

The content on this page, including all images and pictures, was created by DTU Nanolab staff, unless otherwise stated.

Feedback to this page: click here

Development Comparison Table

Manual beaker development Developer: SU8 (Wet bench) Developer: E-beam 02 Developer: TMAH Manual 02 Developer: TMAH UV-lithography Developer: TMAH Stepper
Purpose

Fall-back option if you have a process, which is not compatible with the automatic, or semi-automatic, tools

Requires individual risk assessment for TMAH development!

Development of:

  • SU-8

Development of:

  • ZEP 520A
  • AR-P 6200.xx (CSAR)

Development of:

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
  • DUV resists

Development of:

  • AZ nLOF
  • AZ MiR 701
  • AZ 5214E
  • AZ 4562
  • DUV resists

Post-exposure baking

Development of:

  • DUV resists

Post-exposure baking

Developer Process dependent mr-Dev 600 (PGMEA)
  • ZED N-50
  • AR 600-50
 AZ 726 MIF (2.38% TMAH in water) AZ 726 MIF (2.38% TMAH in water) AZ 726 MIF (2.38% TMAH in water)
Method Submersion Submersion Puddle Puddle Puddle Puddle
Handling

Manual handling in beakers

  • Chip bucket
  • Single wafer carrier
  • Carrier for up to 5 wafers
  • Chip bucket
  • Single wafer carrier
  • Carrier for up to 6 wafers
  • Vacuum-free edge-grip chucks for 50 mm, 100 mm & 150 mm, and 200 mm substrates
  • Chip chuck for chips & 50 mm substrates
  • Vacuum-free edge-grip chuck for 100 mm & 150 mm substrates
  • Chip chuck for chips & 50 mm substrates
 Vacuum chuck Vacuum chuck
Process temperature Room temperature Room temperature Room temperature Room temperature Room temperature Room temperature
Process agitation No agitation allowed Magnetic stirrer Rotation Rotation Rotation Rotation
Process rinse Process dependent IPA IPA DI water DI water DI water
Substrate size
  • Chips
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • Chips
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers
  • Chips (5mm to 2")
  • 50 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers
  • Chips (5mm to 50 mm)
  • 100 mm wafers
  • 150 mm wafers
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers (may require tool change)
  • 100 mm wafers
  • 150 mm wafers
  • 200 mm wafers (may require tool change)
Allowed materials All cleanroom approved materials
  • Silicon and glass substrates
  • Film or pattern of all but Type IV
 All cleanroom approved materials
  • All cleanroom approved materials
  • Film or pattern of all types
  • Silicon and glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
  • Silicon, III-V, and glass substrates
  • Films, or patterned films, of any material except type IV (Pb, Te)
Batch size 1 - 5 1 - 6 1 1 1 - 25 1 - 25



Decommisioned tools

Developer 1 & 2 were decommissioned 2017-01.

Information about decommissioned tool can be found here.


Developer 6 inch was decommissioned 2019-12.

Information about decommissioned tool can be found here.

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