Specific Process Knowledge/Thin film deposition/Furnace LPCVD PolySilicon: Difference between revisions
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'''Feedback to this page''': '''[mailto:thinfilm@ | {{cc-nanolab}} | ||
'''Feedback to this page''': '''[mailto:thinfilm@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Furnace_LPCVD_PolySilicon) click here]''' | |||
[[Category: Equipment|Thin film LPCVD Poly]] | [[Category: Equipment|Thin film LPCVD Poly]] | ||
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[[Category: Thin Film Deposition|LPCVD Poly]] | [[Category: Thin Film Deposition|LPCVD Poly]] | ||
==Deposition of Silicon using LPCVD== | |||
==Deposition of | |||
[[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|4" polysilicon furnace (B4) located in cleanroom B-1]] | [[Image:A4_Furnace_PolySi.jpg|300x300px|thumb|4" polysilicon furnace (B4) located in cleanroom B-1]] | ||
[[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom E-6]] | [[Image:E2.JPG|300x300px|thumb|6" polysilicon furnace located (E2) in cleanroom E-6]] | ||
DTU Nanolab has two furnaces for deposition of LPCVD (Low Chemical Vapour Deposition) silicon: A 6" furnace (installed in 2011) for deposition of standard polySi, amorphous Si and boron doped polySi on 100 mm or 150 mm wafers and a 4" furnace (installed in 1995) for deposition of standard polySi, amorphous Si, boron- and phosphorous doped polySi on 100 mm wafers. In LabManager the two furnaces are named "Furnace: LPCVD Poly-Si (4") (B4)" and "Furnace: LPCVD Poly-Si (6") (E2)", respectively. Both furnaces are Tempress horizontal furnaces. | |||
The LPCVD silicon deposition is a batch process, where silicon is deposited on a batch of 25 or 50 wafers (6" polySi furnace) or 30 wafers (4" polySi furnace). The silicon has a good step coverage, and especially for standard polySi the film thickness is very uniform over the wafers. | The LPCVD silicon deposition is a batch process, where silicon is deposited on a batch of 25 or 50 wafers (6" polySi furnace) or 30 wafers (4" polySi furnace). The silicon has a good step coverage, and especially for standard polySi the film thickness is very uniform over the wafers. | ||
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'''The user manuals, quality control procedures and results, technical information and contact information can be found in LabManager:''' | '''The user manuals, quality control procedures and results, technical information and contact information can be found in LabManager:''' | ||
'''[http://www.labmanager | '''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=86 4" LPCVD polysilicon furnace (B4)]''' | ||
'''[http://www.labmanager.dtu.dk/function.php?module=Machine&view=view&mach=291 6" LPCVD polysilicon furnace (E2)]''' | |||
'''[https://labmanager.dtu.dk/d4Show.php?id=1926 Furnace computer manual]''' | |||
== Manual for the furnace computer to the A, B, C and E stack furnaces == | |||
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here: | |||
[[Media:Furnace computer manual.pdf|Manual for furnace computers for the A, B, C and E stack furnaces]] | |||
==Process information== | ==Process information== | ||
*[[ | *[[/Standard recipes, QC limits and results for the 4" polysilicon furnace|Deposition of polysilicon using the B4 4" polysilicon furnace]] | ||
*[[/Boron doped poly-Si and a-Si |Boron doped poly-Si and a-Si by using 4" polysilicon furnace]] | *[[/Boron doped poly-Si and a-Si |Boron doped poly-Si and a-Si by using the B4 4" polysilicon furnace]] | ||
*[[/Phosphorous doped poly-Si|Phosphorous doped poly-Si using the B4 4" polysilicon furnace]] | |||
*[[ | *[[/Standard recipes, QC limits and results for the 6" polysilicon furnace|Deposition of polysilicon using the E2 6" polysilicon furnace]] | ||
*[[/Boron doped poly-Si |Boron doped poly-Si using the E2 6" polysilicon furnace]] | |||
*[[ | |||
==Overview of the performance of the LPCVD polysilicon processes and some process related parameters== | ==Overview of the performance of the LPCVD polysilicon processes and some process related parameters== | ||
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== Rules for storage and RCA cleaning of wafers to the B4 and E2 furnaces == | |||
*[[Specific_Process_Knowledge/Thermal_Process/Storage_and_cleaning_of_wafer_to_the_A,_B,_C_and_E_stack_furnaces|Storage and cleaning of wafer to the B4 and E2 furnaces]] | |||