Specific Process Knowledge/Lithography/Strip

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Strip Comparison Table

	Plasma Asher 3: Descum	Plasma Asher 4 (Clean)	Plasma Asher 5 (Dirty)	Resist strip	Lift-off
Purpose	Resist descum	Resist stripping Resist descum	Resist stripping Resist descum	Resist stripping	Metal lift-off
Method	Plasma ashing	Plasma ashing	Plasma ashing	Solvent & ultrasonication	Solvent & ultrasonication
Process gasses	O2 (50 sccm)	O2 (0-500 sccm) N2 (0-500 sccm)	O2 (0-500 sccm) N2 (0-500 sccm) CF4 (0-200 sccm)	NA	NA
Process power	10-100 W (10-100%)	150-1000 W	150-1000 W	NA	NA
Process solvent	NA	NA	NA	NMP (Remover 1165) IPA (rinsing agent)	NMP (Remover 1165) IPA (rinsing agent)
Substrate batch	Chips: several 50 mm wafer: several 100 mm wafer: 1	Chips: several 50 mm wafer: several 100 mm wafer: 1-25 150 mm wafer: 1-25 200 mm wafer: 1-25	Chips: several 50 mm wafer: several 100 mm wafer: 1-25 150 mm wafer: 1-25 200 mm wafer: 1-25	100 mm wafer: 1-25 150 mm wafer: 1-25	100 mm wafer: 1-25 150 mm wafer: 1-25
Substrate materials	No polymer substrates Silicon substrates III-V substrates Glass substrates Films, or patterned films, of any material except type IV (Pb, Te)	No metals No metal oxides No III-V materials Silicon substrates Glass substrates Polymer substrates Films, or patterned films, of resists/polymers	Silicon substrates III-V substrates Glass substrates Polymer substrates Films, or patterned films, of any material except type IV (Pb, Te)	No metals No metal oxides Silicon substrates III-V substrates Glass substrates Polymer substrates Films, or patterned films, of resists/polymers	Silicon substrates III-V substrates (only if clean) Glass substrates Films, or patterned films, of any material except type IV (Pb, Te)

Plasma Ashing process parameters

	Resist stripping	Descum	Descum	Surface treatment	Other ashing of organic material
Tool	Plasma asher 4 & 5	Plasma asher 3: Descum	Plasma asher 4 & 5	Plasma asher 4 & 5	Plasma asher 4 & 5
Process pressure	1.3 mbar	0.8 mbar	1.3 mbar	0.5-1.5 mbar	0.5-1.5 mbar
Process gasses	O2 (100 sccm) N2 (100 sccm)	O2 (45 sccm)	O2 (100 sccm) N2 (100 sccm)	O2 N2 CF4	O2
Process power	1000 W	100 W	200 W	150-1000 W	150-1000 W
Process time	20-90 minutes	1-10 minutes	5-15 minutes	Seconds to minutes	Many hours, material dependent
Substrate batch	1-25	1-2	1-25	1-25	1-25

Overview of wet bench 06 and 07

	Resist Strip	Lift-off
Process	Wet resist strip	Metal lift-off process
Chemical	Remover 1165 (NMP)	Remover 1165 (NMP)
Process temperature	Up to 65°C	Up to 65°C
Substrate batch	1-25 wafers	1-25 wafers
Substrate size	100 mm wafers 150 mm wafers	100 mm wafers 150 mm wafers
Materials allowed	Silicon Silicon oxide Silicon nitride Silicon oxynitride	All metals except Type IV (Pb, Te)

Decommisioned tools

Plasma asher 1 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.

Plasma asher 2 was decommissioned 2024-12-02.

Information about decommissioned tool can be found here.