Specific Process Knowledge/Thermal Process/D4 III-V Oven

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III-V Oven (D4)

III-V Oven (D4). Positioned in cleanroom area F-3/ Photo: DTU Nanolab internal.

The III-V Oven (D4) is used for wet thermal oxidation of III-V devices, for instance for lateral oxidation of thin AlGaAs layers to defined apertures in light-limiting diodes.

The furnace is an old Tempress horizontal furnace. The quartz boat is loaded manually into the furnace by use of a push rod. The furnace is cooled down to room temperature when it is not being used.

Before use, devices have to be cleaned. A short BHF dip can be used to remove any native oxide which can be difficult to penetrate by a wet thermal oxidation.

Please check the cross contamination information in LabManager before you use the furnace.

The user manual and contact information can be found in LabManager:

III-V Oven (D4)

Overview of the performance of the III-V Oven and some process related parameters

Purpose		Wet oxidation of III-V dvices
Performance	Lateral oxidation rate	Very sample dependent
Process parameter range	Process temperature	420 oC
	Process pressure	1 atm
	Gasses on the system	N2 (bobler) N2
Substrates	Batch size	Several smaller samples (placed vertically on a quartz plate)
	Substrate materials allowed	III-V devices Silicon