Specific Process Knowledge/Lithography/UVExposure/aligner MLA1

Aligner: Maskless 01

Aligner: Maskless 01 is located in E-4.

The MLA 100 Maskless Aligner located in the E-4 cleanroom is a direct exposure lithography tool installed in 2017. It is a UV LED exposure system, that exposes the patterns directly on photosensitive resists on chips, 2, 4, and 6 inch substrates, without prior fabrication of the mask. The system offers top side alignment with high accuracy.

Link to information about alignment mark design.

The user manual and contact information can be found in LabManager:

Equipment info in LabManager - requires login

Exposure dose and defocus

Information on UV exposure dose

Process information

• Exposure technology
• Process parameters
• Substrate positioning
• Alignment
• Optimal use of the maskless aligner

Quality Control (QC)

Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Dose and Defoc

The QC procedure for Aligner: Maskless 01 (MLA1) - requires login The newest QC data for Aligner: Maskless 01 (MLA1) - requires login QC: Dose and defocus test on 1.5µm AZ5214E QC limits Dose test Step size is 5 mJ/cm2 Test range is last QC value ± 10 mJ/cm2 (5 steps total) none Defoc test Step size is 1 defoc Test range is last QC value ± 4 (5 steps total) none

Quality Control (QC) for Aligner: Maskless 01 (MLA1) - Alignment

The QC procedure for Aligner: Maskless 01 (MLA1) - requires login The newest QC data for Aligner: Maskless 01 (MLA1) - requires login QC Recipe: Alignment accuracy test QC limits Topside alignment Expose an overlay design after automatic alignment to 4 alignment marks using the High Res camera and applying scaling and shearing. Alignment accuracy in 9 points across a 100mm wafer is measured, the average alignment error is reported. Must be better than 1µm Camera offsets will be adjusted if alignment error is outside the limit.

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	Projection
	Exposure light	365nm (LED), FWHM=8nm
	Focusing method	Pneumatic
	Minimum structure size	down to 1µm
	Design formats	GDS-II CIF DXF Gerber HIMT format
	Alignment modes	Top side only, ±2µm (±1µm can be achieved)
Substrates	Substrate size	maximum writing area: 125x125 mm2 150 mm wafer 100 mm wafer 50 mm wafer pieces down to 5x5 mm2
	Allowed materials	All cleanroom materials Total height variation across the substrate must be less than ±40 µm - including wafer bow
	Batch	1