Aligner: MA6-2

The Aligner: MA6-2 is located in E-4.

The Süss MicroTek Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, low vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA (video) microscope.

The aligner can also be used for bond alignment (for Wafer Bonder 02). Special training is required.

Training videos:

Operation

Alignment

The user manual, quality control procedures and results, user APVs, and contact information can be found in LabManager - requires login

Exposure dose

Information on UV exposure dose

Process information

The Aligner: MA6-2 has an i-line notch filter installed. This results in an exposure light peak at 365nm. Compared to exposure on the KS Aligner, the optimal dose should be very similar. The 500W Hg-Xe lamp also enables exposure in the DUV range around 240nm. This functionality is not established yet, partly due to safety concerns.

Link to information about alignment mark design and locations.

Quality Control (QC)

Quality Control (QC) for Aligner: MA6-2

The QC procedure for Aligner: MA6-2 - requires login
The newest QC data for Aligner: MA6-2 - requires login

QC Recipe:	Manual intensity measurement
Measurement area	100 mm
Number of measurements	5

QC limits	Aligner: MA6-2
Nominal intensity	11 mW/cm² @ 365 nm
Intensity deviation from nominal	≤5%
Intensity non-uniformity	≤2%

Power supply and/or lamp will be adjusted if intensity is outside the limit.

Alignment

Top Side Alignment:

TSA microscope standard objectives: 5X, and 10X (20X available)
TSA microscope special objectives: 11.25X offset (for smaller separation)

Minimum distance between TSA microscope objectives: 33 mm (8 mm for special objectives)
- Alignment of smaller separations is possible using the "scan microscope" function
Maximum distance between TSA microscope objectives: 160 mm
TSA microscope travel range: X +/- 25mm; Y +20mm / -75mm (towards flat)

BackSide Alignment:

Minimum distance between BSA microscope objectives: 15 mm
Maximum distance between BSA microscope objectives: 100 mm
BSA microscope travel range: X +50mm / -16mm; Y +50mm / -20mm (towards flat)
BSA chuck view ranges:
- 2": X +/- 8-22mm; Y +/- 0-6mm
- 4": X +/- 14-46mm; Y +/- 0-10mm
- 6": X +/- 14-69mm; Y +/- 0-10mm (OBS: Max. separation of BSA microscopes is 100mm)

Microscope field of view (W x H, splitfield):

TSA 5X
- Oculars: 1.3mm x 2.6mm (Ø2.6mm full field)
- Camera: 350µm x 500µm (700µm x 500µm full field)
TSA 10X
- Oculars: 0.6mm x 1.3mm (Ø1.3mm full field)
- Camera: 150µm x 250µm (350µm x 250µm full field)
TSA special
- Oculars: 0.55mm x 1.1mm (Ø1.1mm full field)
- Camera: 150µm x 200µm (300µm x 200µm full field)
BSA camera
- Low: 1.5mm x 2mm (3mm x 2mm full field)
- High: 450µm x 650µm (950µm x 650µm full field)

Light intensity and uniformity after lamp ignition

Light intensity and uniformity after lamp ignition. CP is constant power mode, CI is constant intensity mode. The accept limits for the CI mode is ±5%, the accept limit for the non-uniformity is 2%. CP mode has no accept limit.

The lamp requires about 15 minutes of on-time after lamp ignition, before the light output has stabilized, and users using the constant power mode should always wait for 15 minutes after ignition, before starting processing.

If users use the constant intensity mode, this waiting time is not necessary, since the internal light sensor automatically adjusts the output to match the setpoint value.

The non-uniformity of the light, in CI mode, is unaffected by the stabilization time.

Equipment performance and process related parameters

Purpose		Mask alignment and UV exposure, potentially DUV exposure ¹⁾ Bond alignment
Performance	Exposure mode	vacuum contact, hard contact, soft contact, proximity, flood exposure
	Exposure light/filters	broadband (i-, g-, h-line) 365 nm (i-line) "UV300" (280-350 nm) DUV (240 nm) ¹⁾
	Minimum structure size	Typically 1.25 µm, possibly down to 0.8 µm ¹⁾
	Mask size	5x5 inch 7x7 inch special holder for 4 x 2" designs on 5x5 inch
	Alignment modes	Top side (TSA), ±1µm (machine spec: ±2µm) Backside (BSA), ±2µm (machine spec: ±5µm)
Substrates	Substrate size	small pieces 1x1cm 50 mm wafers 100 mm wafers 150 mm wafers
	Allowed materials	All cleanroom materials except copper and steel Dedicated chuck for III-V materials
	Batch	1

¹⁾ Not available. Requires tool change. Would require safety investigation (and a dedicated project) to become available.