Aligner: MA6-1

SUSS Mask Aligner MA6 is designed for high resolution photolithography. The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied. Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.

Training videos:
The training videos were made for MA6-2, but operation of MA6-1 is very similar as they are exactly the same model. Due to a different power supply, however, procedures for ignition and intensity control of the lamp is different for MA6-1. Please refer to the manual for the correct procedures.

Operation

Alignment

The user manual(s), quality control procedure(s) and results, and contact information can be found in LabManager - requires login

Exposure dose

Information on UV exposure dose

Process information

The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.

Link to information about alignment mark design and locations.

Equipment performance and process related parameters

Purpose		Alignment and UV exposure
Performance	Exposure mode	vacuum contact, hard contact, soft contact, proximity, flood exposure
	Exposure light/filters	365 nm (i-line) broadband (i-, g-, h-line), requires tool change (303 nm, requires tool change)
	Minimum structure size	down to 1.25µm
	Mask size	5x5 inch
	Alignment modes	Top side (TSA), ±2µm Backside (BSA), ±5µm
Substrates	Substrate size	Mask exposure and alignment: 100 mm wafers Flood exposure: samples up to 150 mm wafers
	Allowed materials	All PolyFabLab materials
	Batch	1