Specific Process Knowledge/Lithography/Strip/PlasmaAsher1

The Plasma Asher 1 is placed in C-1

The Plasma Asher 1 (TePla 300 auto load model) can be used for the following process:

• Photoresist stripping
• Descumming
• Surface cleaning after storage
• Surface cleaning after processes using oil pump or diffusion pump vacuum
• Surface cleaning as part of photolithography after wet developing of lacquer structures prior to wet or plasma etching
• Stripping of photoresist layers after etching, including after being exposed to high temperatures as after implantation, ion etching, sputter etching, RIE
• Removal of organic passivation layers and masks
• Etching of glass and ceramic
• Etching of SiO$_{2}$, Si$_{3}$N$_{4}$, Si
• Removal of polyimide layers

The machine can be used for almost every materials, but if you have any doubt about your materials are compatible with the plasma process it is better to ask photolithography group at Nanolab.

The user manual, user APV, and contact information can be found in LabManager - requires login

Process Information

• SiO2 etch using Plasma Asher 1
• Descum