Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano4

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The Sinano4.0 recipe

Recipe Sinano4.0
Recipe Gas Cl2 20 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 60 W PP
Temperature 20 degs
Hardware 100 mm Spacers
Time 90 secs
Conditions Run ID 435, ID
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 110 nm zep etched down to 43 nm
Nominal trench line width ' ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 154 169 170 172 177 169 9
Sidewall angle degs 85 83 84 84 84 84 1
CD loss nm/edge 28 52 68 87 101 67 29
CD loss foot nm/edge 28 52 68 87 101 67 29
Bowing 24 28 24 20 16 22 5
Bottom curvature -21 18 20 15 11 9 17
Zep etch rate 45