Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinano35

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The Sinano3.5 recipe

Recipe Sinano3.5
Recipe Gas BCl3 5 sccm, HBR 15 sccm
Pressure 5 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 60 W PP
Temperature 20 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 438, 440, ID
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask The 180 nm zep resist etched down to 43 nm


Nominal trench line width ' ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 90 109 112 114 117 108 11
Sidewall angle degs 83 81 82 81 80 81 1
CD loss nm/edge 27 47 62 80 97 63 27
CD loss foot nm/edge 27 47 62 80 97 63 27
Bowing 10 14 13 11 13 12 2
Bottom curvature -24 -18 10 5 5 -4 15